JPS5540763Y2 - - Google Patents
Info
- Publication number
- JPS5540763Y2 JPS5540763Y2 JP3054276U JP3054276U JPS5540763Y2 JP S5540763 Y2 JPS5540763 Y2 JP S5540763Y2 JP 3054276 U JP3054276 U JP 3054276U JP 3054276 U JP3054276 U JP 3054276U JP S5540763 Y2 JPS5540763 Y2 JP S5540763Y2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3054276U JPS5540763Y2 (ja) | 1976-03-11 | 1976-03-11 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3054276U JPS5540763Y2 (ja) | 1976-03-11 | 1976-03-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51121175U JPS51121175U (ja) | 1976-10-01 |
JPS5540763Y2 true JPS5540763Y2 (ja) | 1980-09-24 |
Family
ID=28138261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3054276U Expired JPS5540763Y2 (ja) | 1976-03-11 | 1976-03-11 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5540763Y2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4139442A (en) * | 1977-09-13 | 1979-02-13 | International Business Machines Corporation | Reactive ion etching method for producing deep dielectric isolation in silicon |
JPS57199258A (en) * | 1981-06-01 | 1982-12-07 | Mitsubishi Electric Corp | Semiconductor integrated circuit device and manufacture of the same |
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1976
- 1976-03-11 JP JP3054276U patent/JPS5540763Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS51121175U (ja) | 1976-10-01 |