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Priority to JP751909ApriorityCriticalpatent/JPS5536187B2/ja
Priority to FR7539999Aprioritypatent/FR2296265A1/fr
Priority to DE2559001Aprioritypatent/DE2559001C2/de
Publication of JPS5182581ApublicationCriticalpatent/JPS5182581A/ja
Publication of JPS5536187B2publicationCriticalpatent/JPS5536187B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs