JPS5533189B2 - - Google Patents
Info
- Publication number
- JPS5533189B2 JPS5533189B2 JP1193079A JP1193079A JPS5533189B2 JP S5533189 B2 JPS5533189 B2 JP S5533189B2 JP 1193079 A JP1193079 A JP 1193079A JP 1193079 A JP1193079 A JP 1193079A JP S5533189 B2 JPS5533189 B2 JP S5533189B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/452—Input structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/875,715 US4166223A (en) | 1978-02-06 | 1978-02-06 | Dual field effect transistor structure for compensating effects of threshold voltage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54121682A JPS54121682A (en) | 1979-09-20 |
| JPS5533189B2 true JPS5533189B2 (OSRAM) | 1980-08-29 |
Family
ID=25366244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1193079A Granted JPS54121682A (en) | 1978-02-06 | 1979-02-06 | Dual fet transistor |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4166223A (OSRAM) |
| JP (1) | JPS54121682A (OSRAM) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54125986A (en) * | 1978-03-23 | 1979-09-29 | Handotai Kenkyu Shinkokai | Semiconductor including insulated gate type transistor |
| US4499482A (en) * | 1981-12-22 | 1985-02-12 | Levine Michael A | Weak-source for cryogenic semiconductor device |
| US4587541A (en) * | 1983-07-28 | 1986-05-06 | Cornell Research Foundation, Inc. | Monolithic coplanar waveguide travelling wave transistor amplifier |
| US5247554A (en) * | 1987-01-16 | 1993-09-21 | Kabushiki Kaisha Toshiba | Charge detection circuit |
| US4937075A (en) * | 1989-04-27 | 1990-06-26 | Digital Equipment Corporation | Method of making semiconductor chip having field effect transistors which have differing threshold voltages determined in a single masking step |
| US4959701A (en) * | 1989-05-01 | 1990-09-25 | Westinghouse Electric Corp. | Variable sensitivity floating gate photosensor |
| US5100831A (en) * | 1990-02-16 | 1992-03-31 | Sumitomo Electric Industries, Ltd. | Method for fabricating semiconductor device |
| US6818939B1 (en) * | 2003-07-18 | 2004-11-16 | Semiconductor Components Industries, L.L.C. | Vertical compound semiconductor field effect transistor structure |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE638316A (OSRAM) * | 1962-10-15 | |||
| JPS4915668B1 (OSRAM) * | 1969-04-15 | 1974-04-16 | ||
| NL7212912A (OSRAM) * | 1972-09-23 | 1974-03-26 | ||
| GB1457253A (en) * | 1972-12-01 | 1976-12-01 | Mullard Ltd | Semiconductor charge transfer devices |
| US4000504A (en) * | 1975-05-12 | 1976-12-28 | Hewlett-Packard Company | Deep channel MOS transistor |
| GB1548877A (en) * | 1975-06-26 | 1979-07-18 | Mullard Ltd | Semiconductor devices |
-
1978
- 1978-02-06 US US05/875,715 patent/US4166223A/en not_active Expired - Lifetime
-
1979
- 1979-02-06 JP JP1193079A patent/JPS54121682A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54121682A (en) | 1979-09-20 |
| US4166223A (en) | 1979-08-28 |