JPS5532217B2 - - Google Patents

Info

Publication number
JPS5532217B2
JPS5532217B2 JP8198276A JP8198276A JPS5532217B2 JP S5532217 B2 JPS5532217 B2 JP S5532217B2 JP 8198276 A JP8198276 A JP 8198276A JP 8198276 A JP8198276 A JP 8198276A JP S5532217 B2 JPS5532217 B2 JP S5532217B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8198276A
Other languages
Japanese (ja)
Other versions
JPS5310337A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8198276A priority Critical patent/JPS5310337A/ja
Priority to NL7707455A priority patent/NL7707455A/xx
Priority to DE19772731499 priority patent/DE2731499A1/de
Publication of JPS5310337A publication Critical patent/JPS5310337A/ja
Publication of JPS5532217B2 publication Critical patent/JPS5532217B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
JP8198276A 1976-07-12 1976-07-12 Etching method Granted JPS5310337A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8198276A JPS5310337A (en) 1976-07-12 1976-07-12 Etching method
NL7707455A NL7707455A (nl) 1976-07-12 1977-07-05 Werkwijze voor het etsen van een siliciumdi- oxydelaag.
DE19772731499 DE2731499A1 (de) 1976-07-12 1977-07-12 Aetzverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8198276A JPS5310337A (en) 1976-07-12 1976-07-12 Etching method

Publications (2)

Publication Number Publication Date
JPS5310337A JPS5310337A (en) 1978-01-30
JPS5532217B2 true JPS5532217B2 (enrdf_load_html_response) 1980-08-23

Family

ID=13761678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8198276A Granted JPS5310337A (en) 1976-07-12 1976-07-12 Etching method

Country Status (3)

Country Link
JP (1) JPS5310337A (enrdf_load_html_response)
DE (1) DE2731499A1 (enrdf_load_html_response)
NL (1) NL7707455A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56137657A (en) * 1980-03-29 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device

Also Published As

Publication number Publication date
DE2731499A1 (de) 1978-01-19
JPS5310337A (en) 1978-01-30
NL7707455A (nl) 1978-01-16

Similar Documents

Publication Publication Date Title
FR2359189B1 (enrdf_load_html_response)
FR2362789B1 (enrdf_load_html_response)
FR2345047B1 (enrdf_load_html_response)
JPS5387910U (enrdf_load_html_response)
JPS5532217B2 (enrdf_load_html_response)
JPS5429023B2 (enrdf_load_html_response)
JPS5355422U (enrdf_load_html_response)
JPS5311052U (enrdf_load_html_response)
JPS5654319Y2 (enrdf_load_html_response)
CS177781B1 (enrdf_load_html_response)
CS178380B1 (enrdf_load_html_response)
JPS5346719U (enrdf_load_html_response)
JPS5323034U (enrdf_load_html_response)
JPS5359836U (enrdf_load_html_response)
JPS5310050U (enrdf_load_html_response)
JPS52123541U (enrdf_load_html_response)
JPS52120005U (enrdf_load_html_response)
JPS5368271U (enrdf_load_html_response)
JPS5372147U (enrdf_load_html_response)
JPS5359562U (enrdf_load_html_response)
CS176992B1 (enrdf_load_html_response)
CS176993B1 (enrdf_load_html_response)
CS177399B1 (enrdf_load_html_response)
CH136676A4 (enrdf_load_html_response)
CH611656A5 (enrdf_load_html_response)