JPS5525806A - Memory device - Google Patents

Memory device

Info

Publication number
JPS5525806A
JPS5525806A JP9622178A JP9622178A JPS5525806A JP S5525806 A JPS5525806 A JP S5525806A JP 9622178 A JP9622178 A JP 9622178A JP 9622178 A JP9622178 A JP 9622178A JP S5525806 A JPS5525806 A JP S5525806A
Authority
JP
Japan
Prior art keywords
temperature
memory device
ram
cycle time
access frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9622178A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yamaga
Hiroyuki Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9622178A priority Critical patent/JPS5525806A/en
Publication of JPS5525806A publication Critical patent/JPS5525806A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To obtain a memory device which can make the best use of the performance of the memory element by detecting the temperature within the memory device via the sensor element and then controlling the cycle time based on the detection output. CONSTITUTION:Sensor element 1 is turned on with increment of the temperature with the output turned to the low level, and the reset timing of flip-flop (FF) 9 is carried out with TX+alpha of a slower phase than TX. This extends the cycle time of the memory device. In other words, the temperature increase of the dynamic semiconductor memory element (RAM) is affected by the access frequency within a fixed time. And the temperature of RAM increases as the access frequency increases, and accordingly the access frequency can be limited by detecting the temperature increase and then extending the cycle time. As a result, the temperature of RAM can be lowered down without intensifying the function of the cooling mechanism especially. In case the temperature is low within the memory device, the cycle time is accelerated to enhance the performance of RAM.
JP9622178A 1978-08-09 1978-08-09 Memory device Pending JPS5525806A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9622178A JPS5525806A (en) 1978-08-09 1978-08-09 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9622178A JPS5525806A (en) 1978-08-09 1978-08-09 Memory device

Publications (1)

Publication Number Publication Date
JPS5525806A true JPS5525806A (en) 1980-02-23

Family

ID=14159171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9622178A Pending JPS5525806A (en) 1978-08-09 1978-08-09 Memory device

Country Status (1)

Country Link
JP (1) JPS5525806A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06346438A (en) * 1993-06-08 1994-12-20 Times Eng:Kk Manufacturing method for high bending tenacious pc pile

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06346438A (en) * 1993-06-08 1994-12-20 Times Eng:Kk Manufacturing method for high bending tenacious pc pile

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