JPS5524257B1 - - Google Patents
Info
- Publication number
- JPS5524257B1 JPS5524257B1 JP8325770A JP8325770A JPS5524257B1 JP S5524257 B1 JPS5524257 B1 JP S5524257B1 JP 8325770 A JP8325770 A JP 8325770A JP 8325770 A JP8325770 A JP 8325770A JP S5524257 B1 JPS5524257 B1 JP S5524257B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8325770A JPS5524257B1 (enExample) | 1970-09-21 | 1970-09-21 | |
| US00421858A US3836999A (en) | 1970-09-21 | 1973-12-05 | Semiconductor with grown layer relieved in lattice strain |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8325770A JPS5524257B1 (enExample) | 1970-09-21 | 1970-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5524257B1 true JPS5524257B1 (enExample) | 1980-06-27 |
Family
ID=13797271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8325770A Pending JPS5524257B1 (enExample) | 1970-09-21 | 1970-09-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5524257B1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57134291U (enExample) * | 1981-02-17 | 1982-08-21 | ||
| JP2014515877A (ja) * | 2011-03-31 | 2014-07-03 | アイメック | 単結晶スズ含有半導体材料を成長させる方法 |
-
1970
- 1970-09-21 JP JP8325770A patent/JPS5524257B1/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57134291U (enExample) * | 1981-02-17 | 1982-08-21 | ||
| JP2014515877A (ja) * | 2011-03-31 | 2014-07-03 | アイメック | 単結晶スズ含有半導体材料を成長させる方法 |