JPS5523800B2 - - Google Patents
Info
- Publication number
- JPS5523800B2 JPS5523800B2 JP6341673A JP6341673A JPS5523800B2 JP S5523800 B2 JPS5523800 B2 JP S5523800B2 JP 6341673 A JP6341673 A JP 6341673A JP 6341673 A JP6341673 A JP 6341673A JP S5523800 B2 JPS5523800 B2 JP S5523800B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722227750 DE2227750C3 (de) | 1972-06-07 | 1972-06-07 | Vorrichtung zum tiegelfreien Zonenschmelzen eines stabförmigen Körpers aus kristallinem Material, insbesondere aus Halbleitermaterial |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4962301A JPS4962301A (US20100268047A1-20101021-C00003.png) | 1974-06-17 |
| JPS5523800B2 true JPS5523800B2 (US20100268047A1-20101021-C00003.png) | 1980-06-25 |
Family
ID=5847082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6341673A Expired JPS5523800B2 (US20100268047A1-20101021-C00003.png) | 1972-06-07 | 1973-06-07 |
Country Status (6)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4521621B2 (ja) * | 1999-05-24 | 2010-08-11 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体単結晶製造方法 |
-
1972
- 1972-06-07 DE DE19722227750 patent/DE2227750C3/de not_active Expired
-
1973
- 1973-02-28 NL NL7302802A patent/NL7302802A/xx unknown
- 1973-06-04 IT IT2497973A patent/IT989026B/it active
- 1973-06-06 DK DK313273A patent/DK136701C/da not_active IP Right Cessation
- 1973-06-07 BE BE132019A patent/BE800620A/xx unknown
- 1973-06-07 JP JP6341673A patent/JPS5523800B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7302802A (US20100268047A1-20101021-C00003.png) | 1973-12-11 |
| DE2227750C3 (de) | 1980-08-28 |
| BE800620A (fr) | 1973-10-01 |
| DK136701C (da) | 1978-06-12 |
| IT989026B (it) | 1975-05-20 |
| DK136701B (da) | 1977-11-14 |
| DE2227750A1 (de) | 1973-12-20 |
| DE2227750B2 (de) | 1979-12-13 |
| JPS4962301A (US20100268047A1-20101021-C00003.png) | 1974-06-17 |
