JPS5519071B2 - - Google Patents

Info

Publication number
JPS5519071B2
JPS5519071B2 JP5327378A JP5327378A JPS5519071B2 JP S5519071 B2 JPS5519071 B2 JP S5519071B2 JP 5327378 A JP5327378 A JP 5327378A JP 5327378 A JP5327378 A JP 5327378A JP S5519071 B2 JPS5519071 B2 JP S5519071B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5327378A
Other languages
Japanese (ja)
Other versions
JPS549593A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS549593A publication Critical patent/JPS549593A/ja
Publication of JPS5519071B2 publication Critical patent/JPS5519071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/124Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1243Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/544Solar cells from Group III-V materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/912Displacing pn junction
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/98Utilizing process equivalents or options

Landscapes

  • Photovoltaic Devices (AREA)
JP5327378A 1977-05-02 1978-05-02 Solar battery and method of producing same Granted JPS549593A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/792,839 US4163987A (en) 1977-05-02 1977-05-02 GaAs-GaAlAs solar cells

Publications (2)

Publication Number Publication Date
JPS549593A JPS549593A (en) 1979-01-24
JPS5519071B2 true JPS5519071B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-05-23

Family

ID=25158234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5327378A Granted JPS549593A (en) 1977-05-02 1978-05-02 Solar battery and method of producing same

Country Status (5)

Country Link
US (1) US4163987A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS549593A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2818262A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2390015A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1559967A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4235651A (en) * 1979-03-19 1980-11-25 Hughes Aircraft Company Fabrication of GaAs-GaAlAs solar cells
DE3068571D1 (en) * 1979-05-01 1984-08-23 Secr Defence Brit Radiation detectors
DE3212026A1 (de) * 1982-03-31 1983-10-06 Siemens Ag Temperatursensor
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material
JPS5936977A (ja) * 1982-08-24 1984-02-29 Mitsubishi Electric Corp 太陽電池およびその製造方法
US5112409A (en) * 1991-01-23 1992-05-12 Solarex Corporation Solar cells with reduced recombination under grid lines, and method of manufacturing same
US5738731A (en) 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US6362097B1 (en) 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
US8247881B2 (en) * 2009-04-27 2012-08-21 University Of Seoul Industry Cooperation Foundation Photodiodes with surface plasmon couplers
US20180226533A1 (en) * 2017-02-08 2018-08-09 Amberwave Inc. Thin Film Solder Bond

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931631A (en) * 1973-07-23 1976-01-06 Monsanto Company Gallium phosphide light-emitting diodes

Also Published As

Publication number Publication date
US4163987A (en) 1979-08-07
GB1559967A (en) 1980-01-30
FR2390015A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-12-01
JPS549593A (en) 1979-01-24
DE2818262A1 (de) 1978-11-09

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