JPS5518052B2 - - Google Patents
Info
- Publication number
- JPS5518052B2 JPS5518052B2 JP7163875A JP7163875A JPS5518052B2 JP S5518052 B2 JPS5518052 B2 JP S5518052B2 JP 7163875 A JP7163875 A JP 7163875A JP 7163875 A JP7163875 A JP 7163875A JP S5518052 B2 JPS5518052 B2 JP S5518052B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7163875A JPS51147186A (en) | 1975-06-12 | 1975-06-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7163875A JPS51147186A (en) | 1975-06-12 | 1975-06-12 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51147186A JPS51147186A (en) | 1976-12-17 |
JPS5518052B2 true JPS5518052B2 (US20100268047A1-20101021-C00003.png) | 1980-05-16 |
Family
ID=13466379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7163875A Granted JPS51147186A (en) | 1975-06-12 | 1975-06-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51147186A (US20100268047A1-20101021-C00003.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6313876U (US20100268047A1-20101021-C00003.png) * | 1986-07-15 | 1988-01-29 | ||
JPH01254545A (ja) * | 1988-03-31 | 1989-10-11 | Dainippon Printing Co Ltd | 金属蓋付容器 |
JPH0354625B2 (US20100268047A1-20101021-C00003.png) * | 1984-05-30 | 1991-08-20 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5799777A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal oxide semiconductor type semiconductor device |
JPS6115369A (ja) * | 1984-07-02 | 1986-01-23 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置及びその製造方法 |
SE461490B (sv) * | 1987-08-24 | 1990-02-19 | Asea Ab | Mos-transistor utbildad paa ett isolerande underlag |
JP2507567B2 (ja) * | 1988-11-25 | 1996-06-12 | 三菱電機株式会社 | 絶縁体基板上の半導体層に形成されたmos型電界効果トランジスタ |
US5264721A (en) * | 1989-04-29 | 1993-11-23 | Fujitsu Limited | Insulated-gate FET on an SOI-structure |
JP2519541B2 (ja) * | 1989-09-06 | 1996-07-31 | 三菱電機株式会社 | 半導体装置 |
-
1975
- 1975-06-12 JP JP7163875A patent/JPS51147186A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0354625B2 (US20100268047A1-20101021-C00003.png) * | 1984-05-30 | 1991-08-20 | ||
JPS6313876U (US20100268047A1-20101021-C00003.png) * | 1986-07-15 | 1988-01-29 | ||
JPH01254545A (ja) * | 1988-03-31 | 1989-10-11 | Dainippon Printing Co Ltd | 金属蓋付容器 |
Also Published As
Publication number | Publication date |
---|---|
JPS51147186A (en) | 1976-12-17 |