JPS5518052B2 - - Google Patents

Info

Publication number
JPS5518052B2
JPS5518052B2 JP7163875A JP7163875A JPS5518052B2 JP S5518052 B2 JPS5518052 B2 JP S5518052B2 JP 7163875 A JP7163875 A JP 7163875A JP 7163875 A JP7163875 A JP 7163875A JP S5518052 B2 JPS5518052 B2 JP S5518052B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7163875A
Other languages
Japanese (ja)
Other versions
JPS51147186A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7163875A priority Critical patent/JPS51147186A/ja
Publication of JPS51147186A publication Critical patent/JPS51147186A/ja
Publication of JPS5518052B2 publication Critical patent/JPS5518052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP7163875A 1975-06-12 1975-06-12 Semiconductor device Granted JPS51147186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7163875A JPS51147186A (en) 1975-06-12 1975-06-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7163875A JPS51147186A (en) 1975-06-12 1975-06-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS51147186A JPS51147186A (en) 1976-12-17
JPS5518052B2 true JPS5518052B2 (US20030204162A1-20031030-M00001.png) 1980-05-16

Family

ID=13466379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7163875A Granted JPS51147186A (en) 1975-06-12 1975-06-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51147186A (US20030204162A1-20031030-M00001.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313876U (US20030204162A1-20031030-M00001.png) * 1986-07-15 1988-01-29
JPH01254545A (ja) * 1988-03-31 1989-10-11 Dainippon Printing Co Ltd 金属蓋付容器
JPH0354625B2 (US20030204162A1-20031030-M00001.png) * 1984-05-30 1991-08-20

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799777A (en) * 1980-12-12 1982-06-21 Toshiba Corp Metal oxide semiconductor type semiconductor device
JPS6115369A (ja) * 1984-07-02 1986-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
SE461490B (sv) * 1987-08-24 1990-02-19 Asea Ab Mos-transistor utbildad paa ett isolerande underlag
JP2507567B2 (ja) * 1988-11-25 1996-06-12 三菱電機株式会社 絶縁体基板上の半導体層に形成されたmos型電界効果トランジスタ
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure
JP2519541B2 (ja) * 1989-09-06 1996-07-31 三菱電機株式会社 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0354625B2 (US20030204162A1-20031030-M00001.png) * 1984-05-30 1991-08-20
JPS6313876U (US20030204162A1-20031030-M00001.png) * 1986-07-15 1988-01-29
JPH01254545A (ja) * 1988-03-31 1989-10-11 Dainippon Printing Co Ltd 金属蓋付容器

Also Published As

Publication number Publication date
JPS51147186A (en) 1976-12-17

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