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Priority to JP12029776ApriorityCriticalpatent/JPS5345678A/ja
Publication of JPS5345678ApublicationCriticalpatent/JPS5345678A/ja
Publication of JPS5516117B2publicationCriticalpatent/JPS5516117B2/ja
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
JP12029776A1976-10-081976-10-08Method of continuous growth of ribbonnform single crystal by horizontal drawinggcrystallization process
GrantedJPS5345678A
(en)