JPS55146854A - Method of coating secondary electron emission of diode - Google Patents

Method of coating secondary electron emission of diode

Info

Publication number
JPS55146854A
JPS55146854A JP4056880A JP4056880A JPS55146854A JP S55146854 A JPS55146854 A JP S55146854A JP 4056880 A JP4056880 A JP 4056880A JP 4056880 A JP4056880 A JP 4056880A JP S55146854 A JPS55146854 A JP S55146854A
Authority
JP
Japan
Prior art keywords
diode
electron emission
secondary electron
coating secondary
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4056880A
Other languages
Japanese (ja)
Other versions
JPS6241378B2 (en
Inventor
Jiyooji Kunatsupu Aran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS55146854A publication Critical patent/JPS55146854A/en
Publication of JPS6241378B2 publication Critical patent/JPS6241378B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Tubes For Measurement (AREA)
  • Physical Vapour Deposition (AREA)
JP4056880A 1979-04-02 1980-03-31 Method of coating secondary electron emission of diode Granted JPS55146854A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7911400A GB2045808A (en) 1979-04-02 1979-04-02 Method of forming a secondary emissive coating on a dynode

Publications (2)

Publication Number Publication Date
JPS55146854A true JPS55146854A (en) 1980-11-15
JPS6241378B2 JPS6241378B2 (en) 1987-09-02

Family

ID=10504270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4056880A Granted JPS55146854A (en) 1979-04-02 1980-03-31 Method of coating secondary electron emission of diode

Country Status (3)

Country Link
JP (1) JPS55146854A (en)
BE (1) BE882558A (en)
GB (1) GB2045808A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039752A (en) * 1983-07-11 1985-03-01 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Electron multiplying element, electron multiplying device with same element and photoelectron multiplier using electron multiplying device
WO2002067288A1 (en) * 2001-02-23 2002-08-29 Hamamatsu Photonics K. K. Photomultiplier

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6185747A (en) * 1984-10-02 1986-05-01 Hamamatsu Photonics Kk Secondary electron emission surface
JP4917280B2 (en) * 2005-06-28 2012-04-18 浜松ホトニクス株式会社 Electron multiplier
US7855493B2 (en) * 2008-02-27 2010-12-21 Arradiance, Inc. Microchannel plate devices with multiple emissive layers
USD1021149S1 (en) * 2021-07-14 2024-04-02 Pavestone, LLC Paver

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039752A (en) * 1983-07-11 1985-03-01 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Electron multiplying element, electron multiplying device with same element and photoelectron multiplier using electron multiplying device
JPH056301B2 (en) * 1983-07-11 1993-01-26 Fuiritsupusu Furuuiranpenfuaburiken Nv
WO2002067288A1 (en) * 2001-02-23 2002-08-29 Hamamatsu Photonics K. K. Photomultiplier
WO2002067287A1 (en) * 2001-02-23 2002-08-29 Hamamatsu Photonics K. K. Photomultiplier
US6794629B2 (en) 2001-02-23 2004-09-21 Hamamatsu Photonics K.K. Photomultiplier
US7102284B2 (en) 2001-02-23 2006-09-05 Hamamatsu Photonics K.K. Photomultiplier

Also Published As

Publication number Publication date
GB2045808A (en) 1980-11-05
JPS6241378B2 (en) 1987-09-02
BE882558A (en) 1980-09-30

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