JPS5514549B1 - - Google Patents

Info

Publication number
JPS5514549B1
JPS5514549B1 JP5351168A JP5351168A JPS5514549B1 JP S5514549 B1 JPS5514549 B1 JP S5514549B1 JP 5351168 A JP5351168 A JP 5351168A JP 5351168 A JP5351168 A JP 5351168A JP S5514549 B1 JPS5514549 B1 JP S5514549B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5351168A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5351168A priority Critical patent/JPS5514549B1/ja
Priority to GB3829469A priority patent/GB1215557A/en
Publication of JPS5514549B1 publication Critical patent/JPS5514549B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP5351168A 1968-07-30 1968-07-30 Pending JPS5514549B1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5351168A JPS5514549B1 (ja) 1968-07-30 1968-07-30
GB3829469A GB1215557A (en) 1968-07-30 1969-07-30 A semiconductor photosensitive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5351168A JPS5514549B1 (ja) 1968-07-30 1968-07-30

Publications (1)

Publication Number Publication Date
JPS5514549B1 true JPS5514549B1 (ja) 1980-04-17

Family

ID=12944825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5351168A Pending JPS5514549B1 (ja) 1968-07-30 1968-07-30

Country Status (2)

Country Link
JP (1) JPS5514549B1 (ja)
GB (1) GB1215557A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170550U (ja) * 1982-05-10 1983-11-14 ホーチキ株式会社 光電式煙感知器

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543483A (en) * 1977-06-10 1979-01-11 Hitachi Ltd Liminous semiconductor device
FR2396419A1 (fr) * 1977-06-27 1979-01-26 Thomson Csf Diode capable de fonctionner en emetteur et detecteur de lumiere de la meme longueur d'onde alternativement
EP0571142A1 (en) * 1992-05-18 1993-11-24 General Electric Company Platinum doped silicon avalanche photodiode
US5446308A (en) * 1994-04-04 1995-08-29 General Electric Company Deep-diffused planar avalanche photodiode
US5438217A (en) * 1994-04-29 1995-08-01 General Electric Company Planar avalanche photodiode array with sidewall segment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170550U (ja) * 1982-05-10 1983-11-14 ホーチキ株式会社 光電式煙感知器

Also Published As

Publication number Publication date
GB1215557A (en) 1970-12-09

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