JPS55138870A - Method of fabricating p-n hetero junction element - Google Patents
Method of fabricating p-n hetero junction elementInfo
- Publication number
- JPS55138870A JPS55138870A JP4529179A JP4529179A JPS55138870A JP S55138870 A JPS55138870 A JP S55138870A JP 4529179 A JP4529179 A JP 4529179A JP 4529179 A JP4529179 A JP 4529179A JP S55138870 A JPS55138870 A JP S55138870A
- Authority
- JP
- Japan
- Prior art keywords
- polyacetylene
- film
- type semiconductor
- semiconductor surface
- polyacetylene film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000005842 heteroatom Chemical group 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract 7
- 229920001197 polyacetylene Polymers 0.000 abstract 7
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 150000002148 esters Chemical class 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 1
- 229910017049 AsF5 Inorganic materials 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052740 iodine Inorganic materials 0.000 abstract 1
- 239000011630 iodine Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000006116 polymerization reaction Methods 0.000 abstract 1
- 230000000391 smoking effect Effects 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/29—Diodes comprising organic-inorganic heterojunctions
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4529179A JPS55138870A (en) | 1979-04-16 | 1979-04-16 | Method of fabricating p-n hetero junction element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4529179A JPS55138870A (en) | 1979-04-16 | 1979-04-16 | Method of fabricating p-n hetero junction element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55138870A true JPS55138870A (en) | 1980-10-30 |
| JPS6223470B2 JPS6223470B2 (enrdf_load_stackoverflow) | 1987-05-22 |
Family
ID=12715201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4529179A Granted JPS55138870A (en) | 1979-04-16 | 1979-04-16 | Method of fabricating p-n hetero junction element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55138870A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4873556A (en) * | 1985-05-07 | 1989-10-10 | Mitsubishi Denki Kabushiki Kaisha | Hetero-junction device |
-
1979
- 1979-04-16 JP JP4529179A patent/JPS55138870A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4873556A (en) * | 1985-05-07 | 1989-10-10 | Mitsubishi Denki Kabushiki Kaisha | Hetero-junction device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6223470B2 (enrdf_load_stackoverflow) | 1987-05-22 |
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