JPS55102241A - Manufacture of mesa-type semiconductor device - Google Patents

Manufacture of mesa-type semiconductor device

Info

Publication number
JPS55102241A
JPS55102241A JP816479A JP816479A JPS55102241A JP S55102241 A JPS55102241 A JP S55102241A JP 816479 A JP816479 A JP 816479A JP 816479 A JP816479 A JP 816479A JP S55102241 A JPS55102241 A JP S55102241A
Authority
JP
Japan
Prior art keywords
film
sio
mesa
vacuum
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP816479A
Other languages
Japanese (ja)
Other versions
JPS5850416B2 (en
Inventor
Yukio Nagayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Metal Industries Ltd filed Critical Tohoku Metal Industries Ltd
Priority to JP816479A priority Critical patent/JPS5850416B2/en
Publication of JPS55102241A publication Critical patent/JPS55102241A/en
Publication of JPS5850416B2 publication Critical patent/JPS5850416B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To perform a surface-stabilization treatment, wherein deterioration in reverse-direction characteristics at high temperatures is less and working is easier in comparison with the method which protects the Si surface exposed by mesa etching with only an oxide film.
CONSTITUTION: A stained film is formed on the exposed surface of Si of the mesa portion by immersing a diode wherein a pn-junction is exposed at a mesa-etched surface 8 into a blended liquid of hydrofluoric acid and nitric acid. The stained film is heat-treated and a stable SiO2 film is formed. Thereafter, the SiO2 film is heat- treated in a vacuum, and a clean SiO2 film 6 is formed. At this time, the degree of vacuum and the burning temperature are set at the specified values. After the burning treatment, an organic resin is immediately applied on the SiO2 film 6 and dried, thereby a protection film 7 is formed. In this constituion, since the vacuum- burnt SiO2 film 6 is protected from the contamination and damage in the subsequent processes, the characteristics of the reverse-direction current are not deteriorated even through the device is operated at the high temperatuer of about 150°C.
COPYRIGHT: (C)1980,JPO&Japio
JP816479A 1979-01-29 1979-01-29 Method for manufacturing mesa semiconductor device Expired JPS5850416B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP816479A JPS5850416B2 (en) 1979-01-29 1979-01-29 Method for manufacturing mesa semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP816479A JPS5850416B2 (en) 1979-01-29 1979-01-29 Method for manufacturing mesa semiconductor device

Publications (2)

Publication Number Publication Date
JPS55102241A true JPS55102241A (en) 1980-08-05
JPS5850416B2 JPS5850416B2 (en) 1983-11-10

Family

ID=11685684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP816479A Expired JPS5850416B2 (en) 1979-01-29 1979-01-29 Method for manufacturing mesa semiconductor device

Country Status (1)

Country Link
JP (1) JPS5850416B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3131658A1 (en) * 2022-01-06 2023-07-07 Stmicroelectronics (Tours) Sas Method of forming a cavity

Also Published As

Publication number Publication date
JPS5850416B2 (en) 1983-11-10

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