JPS5451479A - Surface stabilizing method for semiconductor element - Google Patents
Surface stabilizing method for semiconductor elementInfo
- Publication number
- JPS5451479A JPS5451479A JP11691577A JP11691577A JPS5451479A JP S5451479 A JPS5451479 A JP S5451479A JP 11691577 A JP11691577 A JP 11691577A JP 11691577 A JP11691577 A JP 11691577A JP S5451479 A JPS5451479 A JP S5451479A
- Authority
- JP
- Japan
- Prior art keywords
- moisture
- semiconductor element
- organosilane
- methyl
- diorganopolysiloxane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To reduce the leakage curent by stablizing the surface of the semiconductor element, through the use of constituent consisting of diorganopolysiloxane having hydroxyl group at the end of molecule chain, organosilane having at least two alkoxy groups and organic metal ester compound.
CONSTITUTION: R is methyl, ethyl or phenyl group, and diorganopolysiloxane shown in the generic equation (I) taking n as 50 to 500, and R' and R'' are methyl or ethyl group, and the constituent of organic metal ester compound such as organosilane, dibuthyl tin diacetate and dibuthyl diuralate shown in the generic equation (II) taking n as O to 1 is used. The amount of preparation is made less than 100, 1 to 5 and 2 respectively and this is coated on the exposed surface of PN junction of element. After that, hardening is made under the presence of moisture, and heat treatment of 40 to 250°C under inactive gas atomosphere not including moisture and oxygen is made to this. It is important that no moisture and included under inactive gas atomosphere
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11691577A JPS5451479A (en) | 1977-09-30 | 1977-09-30 | Surface stabilizing method for semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11691577A JPS5451479A (en) | 1977-09-30 | 1977-09-30 | Surface stabilizing method for semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5451479A true JPS5451479A (en) | 1979-04-23 |
Family
ID=14698799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11691577A Pending JPS5451479A (en) | 1977-09-30 | 1977-09-30 | Surface stabilizing method for semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5451479A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5525551A (en) * | 1993-09-20 | 1996-06-11 | Fujitsu Limited | Method for forming insulating film in semiconductor device using a TEOS or HMDS pre-treatment |
-
1977
- 1977-09-30 JP JP11691577A patent/JPS5451479A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5525551A (en) * | 1993-09-20 | 1996-06-11 | Fujitsu Limited | Method for forming insulating film in semiconductor device using a TEOS or HMDS pre-treatment |
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