JPS5451479A - Surface stabilizing method for semiconductor element - Google Patents

Surface stabilizing method for semiconductor element

Info

Publication number
JPS5451479A
JPS5451479A JP11691577A JP11691577A JPS5451479A JP S5451479 A JPS5451479 A JP S5451479A JP 11691577 A JP11691577 A JP 11691577A JP 11691577 A JP11691577 A JP 11691577A JP S5451479 A JPS5451479 A JP S5451479A
Authority
JP
Japan
Prior art keywords
moisture
semiconductor element
organosilane
methyl
diorganopolysiloxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11691577A
Other languages
Japanese (ja)
Inventor
Takashi Yokoyama
Hiroshi Suzuki
Tsutomu Yao
Isao Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11691577A priority Critical patent/JPS5451479A/en
Publication of JPS5451479A publication Critical patent/JPS5451479A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To reduce the leakage curent by stablizing the surface of the semiconductor element, through the use of constituent consisting of diorganopolysiloxane having hydroxyl group at the end of molecule chain, organosilane having at least two alkoxy groups and organic metal ester compound.
CONSTITUTION: R is methyl, ethyl or phenyl group, and diorganopolysiloxane shown in the generic equation (I) taking n as 50 to 500, and R' and R'' are methyl or ethyl group, and the constituent of organic metal ester compound such as organosilane, dibuthyl tin diacetate and dibuthyl diuralate shown in the generic equation (II) taking n as O to 1 is used. The amount of preparation is made less than 100, 1 to 5 and 2 respectively and this is coated on the exposed surface of PN junction of element. After that, hardening is made under the presence of moisture, and heat treatment of 40 to 250°C under inactive gas atomosphere not including moisture and oxygen is made to this. It is important that no moisture and included under inactive gas atomosphere
COPYRIGHT: (C)1979,JPO&Japio
JP11691577A 1977-09-30 1977-09-30 Surface stabilizing method for semiconductor element Pending JPS5451479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11691577A JPS5451479A (en) 1977-09-30 1977-09-30 Surface stabilizing method for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11691577A JPS5451479A (en) 1977-09-30 1977-09-30 Surface stabilizing method for semiconductor element

Publications (1)

Publication Number Publication Date
JPS5451479A true JPS5451479A (en) 1979-04-23

Family

ID=14698799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11691577A Pending JPS5451479A (en) 1977-09-30 1977-09-30 Surface stabilizing method for semiconductor element

Country Status (1)

Country Link
JP (1) JPS5451479A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525551A (en) * 1993-09-20 1996-06-11 Fujitsu Limited Method for forming insulating film in semiconductor device using a TEOS or HMDS pre-treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525551A (en) * 1993-09-20 1996-06-11 Fujitsu Limited Method for forming insulating film in semiconductor device using a TEOS or HMDS pre-treatment

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