Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
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Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP10741377ApriorityCriticalpatent/JPS5440074A/en
Publication of JPS5440074ApublicationCriticalpatent/JPS5440074A/en
PURPOSE: To form an impurity diffusion region featuring an extremely small width by adhering the hetero-material the selectively removed mask material end part to form a stress field.
COPYRIGHT: (C)1979,JPO&Japio
JP10741377A1977-09-061977-09-06Diffusion of impurity
PendingJPS5440074A
(en)