JPS5432451Y1 - - Google Patents

Info

Publication number
JPS5432451Y1
JPS5432451Y1 JP8393975U JP8393975U JPS5432451Y1 JP S5432451 Y1 JPS5432451 Y1 JP S5432451Y1 JP 8393975 U JP8393975 U JP 8393975U JP 8393975 U JP8393975 U JP 8393975U JP S5432451 Y1 JPS5432451 Y1 JP S5432451Y1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8393975U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8393975U priority Critical patent/JPS5432451Y1/ja
Publication of JPS5432451Y1 publication Critical patent/JPS5432451Y1/ja
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP8393975U 1975-06-19 1975-06-19 Expired JPS5432451Y1 (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8393975U JPS5432451Y1 (enExample) 1975-06-19 1975-06-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8393975U JPS5432451Y1 (enExample) 1975-06-19 1975-06-19

Publications (1)

Publication Number Publication Date
JPS5432451Y1 true JPS5432451Y1 (enExample) 1979-10-08

Family

ID=33107575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8393975U Expired JPS5432451Y1 (enExample) 1975-06-19 1975-06-19

Country Status (1)

Country Link
JP (1) JPS5432451Y1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115587A (ja) * 2001-10-03 2003-04-18 Tadahiro Omi <110>方位のシリコン表面上に形成された半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115587A (ja) * 2001-10-03 2003-04-18 Tadahiro Omi <110>方位のシリコン表面上に形成された半導体装置およびその製造方法

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