JPS5421071B2 - - Google Patents
Info
- Publication number
- JPS5421071B2 JPS5421071B2 JP12004473A JP12004473A JPS5421071B2 JP S5421071 B2 JPS5421071 B2 JP S5421071B2 JP 12004473 A JP12004473 A JP 12004473A JP 12004473 A JP12004473 A JP 12004473A JP S5421071 B2 JPS5421071 B2 JP S5421071B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1685072A CH541353A (en) | 1972-11-20 | 1972-11-20 | Device for the epitaxial deposition of semiconductor material by liquid phase epitaxy from at least two solutions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4984178A JPS4984178A (en) | 1974-08-13 |
| JPS5421071B2 true JPS5421071B2 (en) | 1979-07-27 |
Family
ID=4420756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12004473A Expired JPS5421071B2 (en) | 1972-11-20 | 1973-10-26 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3858553A (en) |
| JP (1) | JPS5421071B2 (en) |
| CA (1) | CA1018872A (en) |
| CH (1) | CH541353A (en) |
| DE (1) | DE2357230C3 (en) |
| GB (1) | GB1447380A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3948211A (en) * | 1975-04-08 | 1976-04-06 | July Nikolaevich Griboedov | Plant for chromizing metal articles |
| JPH04299828A (en) * | 1991-03-28 | 1992-10-23 | Shin Etsu Handotai Co Ltd | Semiconductor substrate treatment device |
| JP2885268B2 (en) * | 1994-08-30 | 1999-04-19 | 信越半導体株式会社 | Liquid phase growth method and apparatus |
| US6902619B2 (en) * | 2001-06-28 | 2005-06-07 | Ntu Ventures Pte. Ltd. | Liquid phase epitaxy |
| EP1634980A4 (en) * | 2003-03-17 | 2009-02-25 | Osaka Ind Promotion Org | Method for producing group iii nitride single crystal and apparatus used therefor |
| CN115074820B (en) * | 2022-06-17 | 2023-07-18 | 哈尔滨工业大学 | Double-crucible liquid phase epitaxy preparation method of single crystal RIG thick film |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US553547A (en) * | 1896-01-28 | Half to samuel mawhinney | ||
| US2042559A (en) * | 1933-11-17 | 1936-06-02 | United Shoe Machinery Corp | Conditioning device |
| SE338761B (en) * | 1967-10-20 | 1971-09-20 | Philips Nv | |
| US3827399A (en) * | 1968-09-27 | 1974-08-06 | Matsushita Electric Ind Co Ltd | Apparatus for epitaxial growth from the liquid state |
| US3791344A (en) * | 1969-09-11 | 1974-02-12 | Licentia Gmbh | Apparatus for liquid phase epitaxy |
| US3589336A (en) * | 1969-12-29 | 1971-06-29 | Bell Telephone Labor Inc | Horizontal liquid phase epitaxy apparatus |
| US3692592A (en) * | 1970-02-12 | 1972-09-19 | Rca Corp | Method and apparatus for depositing epitaxial semiconductive layers from the liquid phase |
| US3804060A (en) * | 1970-03-27 | 1974-04-16 | Sperry Rand Corp | Liquid epitaxy apparatus |
| JPS53271B1 (en) * | 1971-03-05 | 1978-01-06 |
-
1972
- 1972-11-20 CH CH1685072A patent/CH541353A/en not_active IP Right Cessation
-
1973
- 1973-10-26 JP JP12004473A patent/JPS5421071B2/ja not_active Expired
- 1973-11-09 CA CA185,515A patent/CA1018872A/en not_active Expired
- 1973-11-12 US US415272A patent/US3858553A/en not_active Expired - Lifetime
- 1973-11-15 GB GB5295773A patent/GB1447380A/en not_active Expired
- 1973-11-16 DE DE2357230A patent/DE2357230C3/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2357230B2 (en) | 1981-02-12 |
| CH541353A (en) | 1973-09-15 |
| US3858553A (en) | 1975-01-07 |
| DE2357230C3 (en) | 1981-10-29 |
| DE2357230A1 (en) | 1974-05-30 |
| JPS4984178A (en) | 1974-08-13 |
| CA1018872A (en) | 1977-10-11 |
| GB1447380A (en) | 1976-08-25 |