JPS5416839B2 - - Google Patents

Info

Publication number
JPS5416839B2
JPS5416839B2 JP2646873A JP2646873A JPS5416839B2 JP S5416839 B2 JPS5416839 B2 JP S5416839B2 JP 2646873 A JP2646873 A JP 2646873A JP 2646873 A JP2646873 A JP 2646873A JP S5416839 B2 JPS5416839 B2 JP S5416839B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2646873A
Other languages
Japanese (ja)
Other versions
JPS49115684A (cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2646873A priority Critical patent/JPS5416839B2/ja
Priority to GB964474A priority patent/GB1458579A/en
Priority to NL7403063A priority patent/NL7403063A/xx
Priority to DE2410721A priority patent/DE2410721A1/de
Publication of JPS49115684A publication Critical patent/JPS49115684A/ja
Publication of JPS5416839B2 publication Critical patent/JPS5416839B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2646873A 1973-03-06 1973-03-06 Expired JPS5416839B2 (cs)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2646873A JPS5416839B2 (cs) 1973-03-06 1973-03-06
GB964474A GB1458579A (en) 1973-03-06 1974-03-04 Semi-conductor gate controlled switch devices
NL7403063A NL7403063A (cs) 1973-03-06 1974-03-06
DE2410721A DE2410721A1 (de) 1973-03-06 1974-03-06 Steuerbares halbleiter-gleichrichterelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2646873A JPS5416839B2 (cs) 1973-03-06 1973-03-06

Publications (2)

Publication Number Publication Date
JPS49115684A JPS49115684A (cs) 1974-11-05
JPS5416839B2 true JPS5416839B2 (cs) 1979-06-25

Family

ID=12194336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2646873A Expired JPS5416839B2 (cs) 1973-03-06 1973-03-06

Country Status (4)

Country Link
JP (1) JPS5416839B2 (cs)
DE (1) DE2410721A1 (cs)
GB (1) GB1458579A (cs)
NL (1) NL7403063A (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2835089A1 (de) * 1978-08-10 1980-03-20 Siemens Ag Thyristor
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
IL70462A (en) * 1982-12-21 1987-09-16 Int Rectifier Corp A.c.solid state relay circuit and thyristor structure
JPH0760891B2 (ja) * 1985-11-01 1995-06-28 日本電信電話株式会社 半導体装置
US20250344514A1 (en) * 2022-05-29 2025-11-06 Soreq Nuclear Research Center Silicon controlled rectifier with schottky anode contact

Also Published As

Publication number Publication date
GB1458579A (en) 1976-12-15
NL7403063A (cs) 1974-09-10
DE2410721A1 (de) 1974-09-12
JPS49115684A (cs) 1974-11-05

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