JPS541633B2 - - Google Patents
Info
- Publication number
- JPS541633B2 JPS541633B2 JP3506773A JP3506773A JPS541633B2 JP S541633 B2 JPS541633 B2 JP S541633B2 JP 3506773 A JP3506773 A JP 3506773A JP 3506773 A JP3506773 A JP 3506773A JP S541633 B2 JPS541633 B2 JP S541633B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3506773A JPS541633B2 (enExample) | 1973-03-29 | 1973-03-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3506773A JPS541633B2 (enExample) | 1973-03-29 | 1973-03-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49123273A JPS49123273A (enExample) | 1974-11-26 |
| JPS541633B2 true JPS541633B2 (enExample) | 1979-01-26 |
Family
ID=12431659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3506773A Expired JPS541633B2 (enExample) | 1973-03-29 | 1973-03-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS541633B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5118409A (enExample) * | 1974-08-07 | 1976-02-14 | Hitachi Ltd | |
| JPS5972165A (ja) * | 1983-09-05 | 1984-04-24 | Hitachi Ltd | 半導体装置 |
| US5281552A (en) * | 1993-02-23 | 1994-01-25 | At&T Bell Laboratories | MOS fabrication process, including deposition of a boron-doped diffusion source layer |
-
1973
- 1973-03-29 JP JP3506773A patent/JPS541633B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS49123273A (enExample) | 1974-11-26 |