Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
  • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
  • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
  • H03K3/356—Bistable circuits
  • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Read Only Memory (AREA)
• Non-Volatile Memory (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=22265185

Family Applications (1)

Country Status (4)

Families Citing this family (3)

Family Cites Families (10)

• 1970
  • 1970-12-14 US US00097798A patent/US3713111A/en not_active Expired - Lifetime
• 1971
  • 1971-12-03 GB GB5620371A patent/GB1369453A/en not_active Expired
  • 1971-12-14 FR FR7144947A patent/FR2118624A5/fr not_active Expired
  • 1971-12-14 JP JP10137871A patent/JPS541609B1/ja active Pending

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