JPS5414075A - Adsorption or filter device - Google Patents
Adsorption or filter deviceInfo
- Publication number
- JPS5414075A JPS5414075A JP7946277A JP7946277A JPS5414075A JP S5414075 A JPS5414075 A JP S5414075A JP 7946277 A JP7946277 A JP 7946277A JP 7946277 A JP7946277 A JP 7946277A JP S5414075 A JPS5414075 A JP S5414075A
- Authority
- JP
- Japan
- Prior art keywords
- adsorption
- filter device
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Filtration Of Liquid (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7946277A JPS5414075A (en) | 1977-07-05 | 1977-07-05 | Adsorption or filter device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7946277A JPS5414075A (en) | 1977-07-05 | 1977-07-05 | Adsorption or filter device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5414075A true JPS5414075A (en) | 1979-02-01 |
JPS5433620B2 JPS5433620B2 (ja) | 1979-10-22 |
Family
ID=13690540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7946277A Granted JPS5414075A (en) | 1977-07-05 | 1977-07-05 | Adsorption or filter device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5414075A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4782031A (en) * | 1983-10-19 | 1988-11-01 | Matsushita Electronics Corporation | Method of making GaAs MOSFET with low source resistance yet having satisfactory leakage current by ion-implantation |
-
1977
- 1977-07-05 JP JP7946277A patent/JPS5414075A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4782031A (en) * | 1983-10-19 | 1988-11-01 | Matsushita Electronics Corporation | Method of making GaAs MOSFET with low source resistance yet having satisfactory leakage current by ion-implantation |
Also Published As
Publication number | Publication date |
---|---|
JPS5433620B2 (ja) | 1979-10-22 |
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