JPS54109378A - Device for drifting via lithium germanium monocrystal at low temperature - Google Patents
Device for drifting via lithium germanium monocrystal at low temperatureInfo
- Publication number
- JPS54109378A JPS54109378A JP1601978A JP1601978A JPS54109378A JP S54109378 A JPS54109378 A JP S54109378A JP 1601978 A JP1601978 A JP 1601978A JP 1601978 A JP1601978 A JP 1601978A JP S54109378 A JPS54109378 A JP S54109378A
- Authority
- JP
- Japan
- Prior art keywords
- drifting
- low temperature
- lithium germanium
- via lithium
- germanium monocrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1601978A JPS54109378A (en) | 1978-02-15 | 1978-02-15 | Device for drifting via lithium germanium monocrystal at low temperature |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1601978A JPS54109378A (en) | 1978-02-15 | 1978-02-15 | Device for drifting via lithium germanium monocrystal at low temperature |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54109378A true JPS54109378A (en) | 1979-08-27 |
Family
ID=11904852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1601978A Pending JPS54109378A (en) | 1978-02-15 | 1978-02-15 | Device for drifting via lithium germanium monocrystal at low temperature |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54109378A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61178500A (en) * | 1985-01-31 | 1986-08-11 | マツクス‐プランク‐ゲゼルシヤフト・ツール・フエルデルング・デル・ヴイツセンシヤフテン・エー・フアウ | Conversion of local atomic composition of solid body, manufacture of semiconductor having locally different electroconductivities, polarization of semiconductor p-n junction, semiconductor-constitutional element, condensationfor matter and gas accumulator |
-
1978
- 1978-02-15 JP JP1601978A patent/JPS54109378A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61178500A (en) * | 1985-01-31 | 1986-08-11 | マツクス‐プランク‐ゲゼルシヤフト・ツール・フエルデルング・デル・ヴイツセンシヤフテン・エー・フアウ | Conversion of local atomic composition of solid body, manufacture of semiconductor having locally different electroconductivities, polarization of semiconductor p-n junction, semiconductor-constitutional element, condensationfor matter and gas accumulator |
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