JPS54106744U - - Google Patents

Info

Publication number
JPS54106744U
JPS54106744U JP1978178285U JP17828578U JPS54106744U JP S54106744 U JPS54106744 U JP S54106744U JP 1978178285 U JP1978178285 U JP 1978178285U JP 17828578 U JP17828578 U JP 17828578U JP S54106744 U JPS54106744 U JP S54106744U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1978178285U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS54106744U publication Critical patent/JPS54106744U/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C15/00Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements

Landscapes

  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP1978178285U 1978-01-03 1978-12-25 Pending JPS54106744U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/866,690 US4141081A (en) 1978-01-03 1978-01-03 MNOS BORAM sense amplifier/latch

Publications (1)

Publication Number Publication Date
JPS54106744U true JPS54106744U (en) 1979-07-27

Family

ID=25348176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1978178285U Pending JPS54106744U (en) 1978-01-03 1978-12-25

Country Status (3)

Country Link
US (1) US4141081A (en)
JP (1) JPS54106744U (en)
DE (1) DE2856838A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253059A (en) * 1979-05-14 1981-02-24 Fairchild Camera & Instrument Corp. EPROM Reliability test circuit
US4542483A (en) * 1983-12-02 1985-09-17 At&T Bell Laboratories Dual stage sense amplifier for dynamic random access memory
JPH0642313B2 (en) * 1985-12-20 1994-06-01 日本電気株式会社 Semiconductor memory
DE69033262T2 (en) * 1989-04-13 2000-02-24 Sandisk Corp., Santa Clara EEPROM card with replacement of faulty memory cells and buffer
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
US5245578A (en) * 1992-08-12 1993-09-14 Micron Technology, Inc. DRAM with a two stage voltage pull-down sense amplifier
US5381368A (en) * 1993-12-10 1995-01-10 Micron Semiconductor, Inc. Hardware implemented row copy enable mode for DRAMS to create repetitive backgrounds for video images or DRAM testing
EP0792507B1 (en) * 1994-11-15 2000-07-26 Cirrus Logic, Inc. Circuits, systems, and methods for accounting for defective cells in a memory device
US6038260A (en) * 1996-01-05 2000-03-14 International Business Machines Corporation Method and apparatus for transposing differential signals onto a set of binary signals to increase the information-carrying capacity of the original set of signals
US5689454A (en) * 1996-01-11 1997-11-18 Cyrix Corporation Circuitry and methodology for pulse capture
US6522592B2 (en) 2001-04-19 2003-02-18 Micron Technology, Inc. Sense amplifier for reduction of access device leakage

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2309616C2 (en) * 1973-02-27 1982-11-11 Ibm Deutschland Gmbh, 7000 Stuttgart Semiconductor memory circuit

Also Published As

Publication number Publication date
DE2856838A1 (en) 1979-08-30
US4141081A (en) 1979-02-20

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