JPS54100673A - Integrated darlington circuit - Google Patents

Integrated darlington circuit

Info

Publication number
JPS54100673A
JPS54100673A JP16133978A JP16133978A JPS54100673A JP S54100673 A JPS54100673 A JP S54100673A JP 16133978 A JP16133978 A JP 16133978A JP 16133978 A JP16133978 A JP 16133978A JP S54100673 A JPS54100673 A JP S54100673A
Authority
JP
Japan
Prior art keywords
darlington circuit
integrated darlington
integrated
circuit
darlington
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16133978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6136714B2 (enrdf_load_html_response
Inventor
Bieeru Rojie Berunaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS54100673A publication Critical patent/JPS54100673A/ja
Publication of JPS6136714B2 publication Critical patent/JPS6136714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617Combinations of vertical BJTs and only diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP16133978A 1977-12-30 1978-12-28 Integrated darlington circuit Granted JPS54100673A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7739796A FR2413785A1 (fr) 1977-12-30 1977-12-30 Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky

Publications (2)

Publication Number Publication Date
JPS54100673A true JPS54100673A (en) 1979-08-08
JPS6136714B2 JPS6136714B2 (enrdf_load_html_response) 1986-08-20

Family

ID=9199556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16133978A Granted JPS54100673A (en) 1977-12-30 1978-12-28 Integrated darlington circuit

Country Status (5)

Country Link
JP (1) JPS54100673A (enrdf_load_html_response)
CA (1) CA1123922A (enrdf_load_html_response)
DE (1) DE2854995C2 (enrdf_load_html_response)
FR (1) FR2413785A1 (enrdf_load_html_response)
GB (1) GB2011713B (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308957A (ja) * 1987-06-11 1988-12-16 Sanyo Electric Co Ltd ダ−リントン・トランジスタ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3549479B2 (ja) * 2000-10-16 2004-08-04 寛治 大塚 バラクタデバイスを備えた半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724659B2 (enrdf_load_html_response) * 1974-10-31 1982-05-25
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308957A (ja) * 1987-06-11 1988-12-16 Sanyo Electric Co Ltd ダ−リントン・トランジスタ

Also Published As

Publication number Publication date
DE2854995C2 (de) 1985-06-20
CA1123922A (en) 1982-05-18
DE2854995A1 (de) 1979-07-05
FR2413785A1 (fr) 1979-07-27
FR2413785B1 (enrdf_load_html_response) 1982-11-12
GB2011713B (en) 1982-04-28
JPS6136714B2 (enrdf_load_html_response) 1986-08-20
GB2011713A (en) 1979-07-11

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