JPS5374328A - Mos-type read only memory - Google Patents

Mos-type read only memory

Info

Publication number
JPS5374328A
JPS5374328A JP14982376A JP14982376A JPS5374328A JP S5374328 A JPS5374328 A JP S5374328A JP 14982376 A JP14982376 A JP 14982376A JP 14982376 A JP14982376 A JP 14982376A JP S5374328 A JPS5374328 A JP S5374328A
Authority
JP
Japan
Prior art keywords
mos
memory
type read
read
rom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14982376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS574037B2 (OSRAM
Inventor
Kenji Natori
Kazunori Ouchi
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14982376A priority Critical patent/JPS5374328A/ja
Publication of JPS5374328A publication Critical patent/JPS5374328A/ja
Publication of JPS574037B2 publication Critical patent/JPS574037B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP14982376A 1976-12-15 1976-12-15 Mos-type read only memory Granted JPS5374328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14982376A JPS5374328A (en) 1976-12-15 1976-12-15 Mos-type read only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14982376A JPS5374328A (en) 1976-12-15 1976-12-15 Mos-type read only memory

Publications (2)

Publication Number Publication Date
JPS5374328A true JPS5374328A (en) 1978-07-01
JPS574037B2 JPS574037B2 (OSRAM) 1982-01-23

Family

ID=15483467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14982376A Granted JPS5374328A (en) 1976-12-15 1976-12-15 Mos-type read only memory

Country Status (1)

Country Link
JP (1) JPS5374328A (OSRAM)

Also Published As

Publication number Publication date
JPS574037B2 (OSRAM) 1982-01-23

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