JPS53674B2 - - Google Patents
Info
- Publication number
- JPS53674B2 JPS53674B2 JP10492771A JP10492771A JPS53674B2 JP S53674 B2 JPS53674 B2 JP S53674B2 JP 10492771 A JP10492771 A JP 10492771A JP 10492771 A JP10492771 A JP 10492771A JP S53674 B2 JPS53674 B2 JP S53674B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10492771A JPS53674B2 (uk) | 1971-12-23 | 1971-12-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10492771A JPS53674B2 (uk) | 1971-12-23 | 1971-12-23 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51074186A Division JPS5242080A (en) | 1976-06-23 | 1976-06-23 | Micro channel type insulated gate field effect transistor and process for productin thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4870486A JPS4870486A (uk) | 1973-09-25 |
| JPS53674B2 true JPS53674B2 (uk) | 1978-01-11 |
Family
ID=14393716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10492771A Expired JPS53674B2 (uk) | 1971-12-23 | 1971-12-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53674B2 (uk) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50107863A (uk) * | 1974-01-30 | 1975-08-25 | ||
| US3899373A (en) * | 1974-05-20 | 1975-08-12 | Ibm | Method for forming a field effect device |
| US3943542A (en) * | 1974-11-06 | 1976-03-09 | International Business Machines, Corporation | High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same |
| JPS52138876A (en) * | 1975-12-27 | 1977-11-19 | Fujitsu Ltd | Production of semiconductor device |
-
1971
- 1971-12-23 JP JP10492771A patent/JPS53674B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4870486A (uk) | 1973-09-25 |