JPS536544A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS536544A
JPS536544A JP8118776A JP8118776A JPS536544A JP S536544 A JPS536544 A JP S536544A JP 8118776 A JP8118776 A JP 8118776A JP 8118776 A JP8118776 A JP 8118776A JP S536544 A JPS536544 A JP S536544A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
lowing
compensate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8118776A
Other languages
Japanese (ja)
Inventor
Toshio Ichiyama
Yasuhito Gamo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8118776A priority Critical patent/JPS536544A/en
Publication of JPS536544A publication Critical patent/JPS536544A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To realize the semiconductor memory unit of integrator circuit configuration which can compensate the lowing of function due to the pattern shift, by forming one dummy element unit to each of the semiconductor memory unit group.
JP8118776A 1976-07-07 1976-07-07 Semiconductor memory unit Pending JPS536544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8118776A JPS536544A (en) 1976-07-07 1976-07-07 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8118776A JPS536544A (en) 1976-07-07 1976-07-07 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS536544A true JPS536544A (en) 1978-01-21

Family

ID=13739453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8118776A Pending JPS536544A (en) 1976-07-07 1976-07-07 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS536544A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613393A (en) * 1984-06-15 1986-01-09 Nec Corp Semiconductor integrated memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52116120A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52116120A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613393A (en) * 1984-06-15 1986-01-09 Nec Corp Semiconductor integrated memory device

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