JPS5357074A - Ionized beam detection or measuring device - Google Patents

Ionized beam detection or measuring device

Info

Publication number
JPS5357074A
JPS5357074A JP12768277A JP12768277A JPS5357074A JP S5357074 A JPS5357074 A JP S5357074A JP 12768277 A JP12768277 A JP 12768277A JP 12768277 A JP12768277 A JP 12768277A JP S5357074 A JPS5357074 A JP S5357074A
Authority
JP
Japan
Prior art keywords
measuring device
beam detection
ionized beam
ionized
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12768277A
Other languages
English (en)
Japanese (ja)
Inventor
Puroteiku Daafuoru
Riipe Georuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Kernforschungsanlage Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kernforschungsanlage Juelich GmbH filed Critical Kernforschungsanlage Juelich GmbH
Publication of JPS5357074A publication Critical patent/JPS5357074A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Measurement Of Current Or Voltage (AREA)
JP12768277A 1976-10-30 1977-10-26 Ionized beam detection or measuring device Pending JPS5357074A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762650154 DE2650154A1 (de) 1976-10-30 1976-10-30 Vorrichtung zum nachweis oder zur messung ionisierender strahlung

Publications (1)

Publication Number Publication Date
JPS5357074A true JPS5357074A (en) 1978-05-24

Family

ID=5992233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12768277A Pending JPS5357074A (en) 1976-10-30 1977-10-26 Ionized beam detection or measuring device

Country Status (5)

Country Link
US (1) US4166218A (en:Method)
JP (1) JPS5357074A (en:Method)
DE (1) DE2650154A1 (en:Method)
FR (1) FR2369576A1 (en:Method)
GB (1) GB1536260A (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514748A (en) * 1983-11-21 1985-04-30 At&T Bell Laboratories Germanium p-i-n photodetector on silicon substrate
US5030831A (en) * 1989-10-19 1991-07-09 University Of Pittsburgh Method of operating p-i-n diodes and superlattice devices as far infrared detectors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2986591A (en) * 1955-10-17 1961-05-30 Ibm Photovoltaic cell
US3410737A (en) * 1965-05-03 1968-11-12 Oak Ridge Technical Entpr Corp Method for producing semiconductor nuclear particle detectors by diffusing
NL6707515A (en:Method) * 1967-05-31 1968-12-02

Also Published As

Publication number Publication date
GB1536260A (en) 1978-12-20
FR2369576B1 (en:Method) 1982-10-22
DE2650154A1 (de) 1978-10-05
US4166218A (en) 1979-08-28
FR2369576A1 (fr) 1978-05-26

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