JPS535637B1 - - Google Patents
Info
- Publication number
- JPS535637B1 JPS535637B1 JP4865872A JP4865872A JPS535637B1 JP S535637 B1 JPS535637 B1 JP S535637B1 JP 4865872 A JP4865872 A JP 4865872A JP 4865872 A JP4865872 A JP 4865872A JP S535637 B1 JPS535637 B1 JP S535637B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14475371A | 1971-05-19 | 1971-05-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS535637B1 true JPS535637B1 (nl) | 1978-03-01 |
Family
ID=22509973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4865872A Pending JPS535637B1 (nl) | 1971-05-19 | 1972-05-18 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS535637B1 (nl) |
DE (1) | DE2224468A1 (nl) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63129175A (ja) * | 1986-11-19 | 1988-06-01 | Agency Of Ind Science & Technol | 水用ピストンポンプ |
JPS63126565U (nl) * | 1987-02-10 | 1988-08-18 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3986912A (en) * | 1975-09-04 | 1976-10-19 | International Business Machines Corporation | Process for controlling the wall inclination of a plasma etched via hole |
JPS5852935B2 (ja) * | 1978-11-20 | 1983-11-26 | 三菱マテリアル株式会社 | 光伝送用素材の製造方法 |
DE3343704A1 (de) * | 1983-12-02 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum aetzen von lochrasterplatten, insbesondere fuer plasma-kathoden-display |
DE3642073C1 (en) * | 1986-12-10 | 1988-02-04 | Heidenhain Gmbh Dr Johannes | Process for etching alkali glass layers by reactive plasma etching |
DE102006051550B4 (de) | 2006-10-30 | 2012-02-02 | Fhr Anlagenbau Gmbh | Verfahren und Vorrichtung zum Strukturieren von Bauteilen unter Verwendung eines Werkstoffs auf der Basis von Siliziumoxid |
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1972
- 1972-05-18 JP JP4865872A patent/JPS535637B1/ja active Pending
- 1972-05-19 DE DE19722224468 patent/DE2224468A1/de active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63129175A (ja) * | 1986-11-19 | 1988-06-01 | Agency Of Ind Science & Technol | 水用ピストンポンプ |
JPS63126565U (nl) * | 1987-02-10 | 1988-08-18 |
Also Published As
Publication number | Publication date |
---|---|
DE2224468A1 (de) | 1973-01-18 |