JPS5347664B2 - - Google Patents

Info

Publication number
JPS5347664B2
JPS5347664B2 JP2329477A JP2329477A JPS5347664B2 JP S5347664 B2 JPS5347664 B2 JP S5347664B2 JP 2329477 A JP2329477 A JP 2329477A JP 2329477 A JP2329477 A JP 2329477A JP S5347664 B2 JPS5347664 B2 JP S5347664B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2329477A
Other languages
Japanese (ja)
Other versions
JPS52116785A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS52116785A publication Critical patent/JPS52116785A/ja
Publication of JPS5347664B2 publication Critical patent/JPS5347664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894—Processes carried out in the presence of a plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
JP2329477A 1976-03-03 1977-03-02 Method and apparatus for gas plasma reaction Granted JPS52116785A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66327176A 1976-03-03 1976-03-03
US76187977A 1977-01-24 1977-01-24

Publications (2)

Publication Number Publication Date
JPS52116785A JPS52116785A (en) 1977-09-30
JPS5347664B2 true JPS5347664B2 (Direct) 1978-12-22

Family

ID=27098713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2329477A Granted JPS52116785A (en) 1976-03-03 1977-03-02 Method and apparatus for gas plasma reaction

Country Status (6)

Country Link
JP (1) JPS52116785A (Direct)
CH (1) CH620314A5 (Direct)
DE (1) DE2708720C2 (Direct)
FR (1) FR2342783A1 (Direct)
GB (1) GB1544172A (Direct)
NL (1) NL7702232A (Direct)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4182646A (en) * 1978-07-27 1980-01-08 John Zajac Process of etching with plasma etch gas
US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
US4342901A (en) * 1980-08-11 1982-08-03 Eaton Corporation Plasma etching electrode
GB2144669B (en) * 1982-12-07 1986-02-26 Standard Telephones Cables Ltd Cleaning electrical contacts
DE3476818D1 (en) * 1983-12-16 1989-03-30 Showa Aluminum Corp Process for producing aluminum material for use in vacuum
JPS60211061A (ja) * 1984-04-05 1985-10-23 Toyota Central Res & Dev Lab Inc アルミニウム材のイオン窒化方法
US4749589A (en) * 1984-12-13 1988-06-07 Stc Plc Method of surface treatment
US6900592B2 (en) 1997-03-18 2005-05-31 The Trustees Of The Stevens Institute Of Technology Method and apparatus for stabilizing of the glow plasma discharges
US5872426A (en) * 1997-03-18 1999-02-16 Stevens Institute Of Technology Glow plasma discharge device having electrode covered with perforated dielectric
US6879103B1 (en) 1997-03-18 2005-04-12 The Trustees Of The Stevens Institute Of Technology Glow plasma discharge device
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3616403A (en) * 1968-10-25 1971-10-26 Ibm Prevention of inversion of p-type semiconductor material during rf sputtering of quartz
US3661761A (en) * 1969-06-02 1972-05-09 Ibm Rf sputtering apparatus for promoting resputtering of film during deposition
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
DE2241229C2 (de) * 1972-08-22 1983-01-20 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum Ätzen von Substraten durch eine Glimmentladung
JPS5740650B2 (Direct) * 1973-08-11 1982-08-28

Also Published As

Publication number Publication date
CH620314A5 (en) 1980-11-14
FR2342783B1 (Direct) 1982-06-11
NL7702232A (nl) 1977-09-06
JPS52116785A (en) 1977-09-30
GB1544172A (en) 1979-04-11
FR2342783A1 (fr) 1977-09-30
DE2708720C2 (de) 1982-08-26
DE2708720A1 (de) 1977-09-15

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