JPS5346676B2 - - Google Patents

Info

Publication number
JPS5346676B2
JPS5346676B2 JP7117375A JP7117375A JPS5346676B2 JP S5346676 B2 JPS5346676 B2 JP S5346676B2 JP 7117375 A JP7117375 A JP 7117375A JP 7117375 A JP7117375 A JP 7117375A JP S5346676 B2 JPS5346676 B2 JP S5346676B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7117375A
Other languages
Japanese (ja)
Other versions
JPS51147191A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50071173A priority Critical patent/JPS51147191A/ja
Priority to US05/594,974 priority patent/US4021767A/en
Publication of JPS51147191A publication Critical patent/JPS51147191A/ja
Publication of JPS5346676B2 publication Critical patent/JPS5346676B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.

Landscapes

  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
JP50071173A 1975-06-12 1975-06-12 Hall element and its method of manufacturing Granted JPS51147191A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50071173A JPS51147191A (en) 1975-06-12 1975-06-12 Hall element and its method of manufacturing
US05/594,974 US4021767A (en) 1975-06-12 1975-07-11 Hall element and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071173A JPS51147191A (en) 1975-06-12 1975-06-12 Hall element and its method of manufacturing

Publications (2)

Publication Number Publication Date
JPS51147191A JPS51147191A (en) 1976-12-17
JPS5346676B2 true JPS5346676B2 (cg-RX-API-DMAC10.html) 1978-12-15

Family

ID=13452991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071173A Granted JPS51147191A (en) 1975-06-12 1975-06-12 Hall element and its method of manufacturing

Country Status (2)

Country Link
US (1) US4021767A (cg-RX-API-DMAC10.html)
JP (1) JPS51147191A (cg-RX-API-DMAC10.html)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141026A (en) * 1977-02-02 1979-02-20 Texas Instruments Incorporated Hall effect generator
US4188605A (en) * 1978-07-21 1980-02-12 Stout Glenn M Encapsulated Hall effect device
US4226649A (en) * 1979-09-11 1980-10-07 The United States Of America As Represented By The Secretary Of The Navy Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques
JPS577985A (en) * 1980-06-18 1982-01-16 Asahi Chem Ind Co Ltd Magnetoelectricity converting element and manufacture thereof
JPS57177583A (en) * 1981-04-14 1982-11-01 Int Standard Electric Corp Holl effect device
GB2143038B (en) * 1983-07-06 1987-12-23 Standard Telephones Cables Ltd Hall effect device
JPS61269386A (ja) * 1985-05-24 1986-11-28 Asahi Chem Ind Co Ltd 磁電変換素子
KR910002313B1 (ko) * 1985-05-10 1991-04-11 아사히가세이고오교 가부시끼가이샤 자전 변환소자
FR2582862B1 (fr) * 1985-05-30 1987-07-17 Thomson Csf Capteur a effet magneto-resistif lineaire, son procede de realisation et son application dans un detecteur de domaines magnetiques
JPS62260374A (ja) * 1986-05-06 1987-11-12 Toshiba Corp 集磁効果型ホ−ル素子とその製造方法
JPS63152185A (ja) * 1986-12-16 1988-06-24 Sharp Corp 感磁性半導体装置の製造方法
US4772929A (en) * 1987-01-09 1988-09-20 Sprague Electric Company Hall sensor with integrated pole pieces
JPH0797666B2 (ja) * 1987-08-28 1995-10-18 株式会社東芝 磁力検出用半導体素子の製造方法
US4828966A (en) * 1987-12-04 1989-05-09 Digital Equipment Corporation Method for producing hall effect sensor for magnetic recording head
US5329480A (en) * 1990-11-15 1994-07-12 California Institute Of Technology Nonvolatile random access memory
US6646354B2 (en) * 1997-08-22 2003-11-11 Micron Technology, Inc. Adhesive composition and methods for use in packaging applications
US6353268B1 (en) 1997-08-22 2002-03-05 Micron Technology, Inc. Semiconductor die attachment method and apparatus
JP3420917B2 (ja) * 1997-09-08 2003-06-30 富士通株式会社 半導体装置
DE19752329A1 (de) * 1997-11-26 1999-05-27 Stolberger Metallwerke Gmbh Verfahren zur Herstellung eines metallischen Verbundbands
US6579728B2 (en) * 1998-08-03 2003-06-17 Privicom, Inc. Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound
EP1031844A3 (fr) * 1999-02-25 2009-03-11 Liaisons Electroniques-Mecaniques Lem S.A. Procédé de fabrication d'un capteur de courant électrique
US20040251506A1 (en) * 2003-06-10 2004-12-16 Johnson Mark B. Hall effect devices, memory devices, and hall effect device readout voltage increasing methods
US7847536B2 (en) * 2006-08-31 2010-12-07 Itron, Inc. Hall sensor with temperature drift control
US8587297B2 (en) * 2007-12-04 2013-11-19 Infineon Technologies Ag Integrated circuit including sensor having injection molded magnetic material
US9000763B2 (en) * 2011-02-28 2015-04-07 Infineon Technologies Ag 3-D magnetic sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1205178B (de) * 1962-05-08 1965-11-18 Siemens Ag Anordnung zur Unterdrueckung von Nullpunktsfehlern infolge von Thermokraeften bei einem Hallspannungserzeuger
DE1540405B1 (de) * 1965-04-23 1970-03-26 Siemens Ag Hallgenerator
US3845444A (en) * 1973-06-11 1974-10-29 Denki Onkyo Co Ltd Galvano-magnetro effect device

Also Published As

Publication number Publication date
US4021767A (en) 1977-05-03
JPS51147191A (en) 1976-12-17

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