JPS5346594B2 - - Google Patents

Info

Publication number
JPS5346594B2
JPS5346594B2 JP1863074A JP1863074A JPS5346594B2 JP S5346594 B2 JPS5346594 B2 JP S5346594B2 JP 1863074 A JP1863074 A JP 1863074A JP 1863074 A JP1863074 A JP 1863074A JP S5346594 B2 JPS5346594 B2 JP S5346594B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1863074A
Other languages
Japanese (ja)
Other versions
JPS50114972A (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1863074A priority Critical patent/JPS5346594B2/ja
Priority to US05/550,769 priority patent/US4073676A/en
Publication of JPS50114972A publication Critical patent/JPS50114972A/ja
Publication of JPS5346594B2 publication Critical patent/JPS5346594B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1863074A 1974-02-18 1974-02-18 Expired JPS5346594B2 (https=)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1863074A JPS5346594B2 (https=) 1974-02-18 1974-02-18
US05/550,769 US4073676A (en) 1974-02-18 1975-02-18 GaAs-GaAlAs semiconductor having a periodic corrugation at an interface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1863074A JPS5346594B2 (https=) 1974-02-18 1974-02-18

Publications (2)

Publication Number Publication Date
JPS50114972A JPS50114972A (https=) 1975-09-09
JPS5346594B2 true JPS5346594B2 (https=) 1978-12-14

Family

ID=11976925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1863074A Expired JPS5346594B2 (https=) 1974-02-18 1974-02-18

Country Status (2)

Country Link
US (1) US4073676A (https=)
JP (1) JPS5346594B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4569054A (en) * 1983-06-17 1986-02-04 Rca Corporation Double heterostructure laser
US4547396A (en) * 1983-06-17 1985-10-15 Rca Corporation Method of making a laser array
US4642143A (en) * 1983-06-17 1987-02-10 Rca Corporation Method of making a double heterostructure laser
WO1985000076A1 (en) * 1983-06-17 1985-01-03 Rca Corporation Phase-locked semiconductor laser array and a method of making same
JPS607720A (ja) * 1983-06-28 1985-01-16 Nec Corp エピタキシヤル成長方法
US4575919A (en) * 1984-05-24 1986-03-18 At&T Bell Laboratories Method of making heteroepitaxial ridge overgrown laser
US4805178A (en) * 1986-03-28 1989-02-14 American Telephone And Telegraph Company, At&T Bell Laboratories Preservation of surface features on semiconductor surfaces
US4902644A (en) * 1986-03-28 1990-02-20 American Telephone And Telegraph Company At&T Bell Laboratories Preservation of surface features on semiconductor surfaces
US4859628A (en) * 1988-04-11 1989-08-22 Northern Telecom Limited Interrupted liquid phase epitaxy process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
US3933538A (en) * 1972-01-18 1976-01-20 Sumitomo Electric Industries, Ltd. Method and apparatus for production of liquid phase epitaxial layers of semiconductors
BE795005A (fr) * 1972-02-09 1973-05-29 Rca Corp Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
CA1019827A (en) * 1973-10-26 1977-10-25 Tatsuro Beppu Method of manufacturing a gallium phosphide light-emitting device

Also Published As

Publication number Publication date
JPS50114972A (https=) 1975-09-09
US4073676A (en) 1978-02-14

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