JPS5346289A - Meandering channel charge transfer device - Google Patents

Meandering channel charge transfer device

Info

Publication number
JPS5346289A
JPS5346289A JP12110076A JP12110076A JPS5346289A JP S5346289 A JPS5346289 A JP S5346289A JP 12110076 A JP12110076 A JP 12110076A JP 12110076 A JP12110076 A JP 12110076A JP S5346289 A JPS5346289 A JP S5346289A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
ctd
channel charge
meandering channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12110076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5756783B2 (show.php
Inventor
Kunihiro Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12110076A priority Critical patent/JPS5346289A/ja
Publication of JPS5346289A publication Critical patent/JPS5346289A/ja
Publication of JPS5756783B2 publication Critical patent/JPS5756783B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Networks Using Active Elements (AREA)
JP12110076A 1976-10-08 1976-10-08 Meandering channel charge transfer device Granted JPS5346289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12110076A JPS5346289A (en) 1976-10-08 1976-10-08 Meandering channel charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12110076A JPS5346289A (en) 1976-10-08 1976-10-08 Meandering channel charge transfer device

Publications (2)

Publication Number Publication Date
JPS5346289A true JPS5346289A (en) 1978-04-25
JPS5756783B2 JPS5756783B2 (show.php) 1982-12-01

Family

ID=14802865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12110076A Granted JPS5346289A (en) 1976-10-08 1976-10-08 Meandering channel charge transfer device

Country Status (1)

Country Link
JP (1) JPS5346289A (show.php)

Also Published As

Publication number Publication date
JPS5756783B2 (show.php) 1982-12-01

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