Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP12043176ApriorityCriticalpatent/JPS5345680A/en
Publication of JPS5345680ApublicationCriticalpatent/JPS5345680A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: To produce the crystal of which the property in the vertical face is uniform, by maintaining the interface of solid and liquid at a flat state at the growth of crystal and by operating so that the growth stripes of the generated crystal may become vertical to the direction of crystal growth (the direction of growth axis).
COPYRIGHT: (C)1978,JPO&Japio
JP12043176A1976-10-081976-10-08Preparation of crystal
PendingJPS5345680A
(en)