JPS5345675B2 - - Google Patents
Info
- Publication number
- JPS5345675B2 JPS5345675B2 JP8038971A JP8038971A JPS5345675B2 JP S5345675 B2 JPS5345675 B2 JP S5345675B2 JP 8038971 A JP8038971 A JP 8038971A JP 8038971 A JP8038971 A JP 8038971A JP S5345675 B2 JPS5345675 B2 JP S5345675B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W10/0142—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations the dielectric materials being chemical transformed from non-dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8038971A JPS5345675B2 (https=) | 1971-10-12 | 1971-10-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8038971A JPS5345675B2 (https=) | 1971-10-12 | 1971-10-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4846276A JPS4846276A (https=) | 1973-07-02 |
| JPS5345675B2 true JPS5345675B2 (https=) | 1978-12-08 |
Family
ID=13716919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8038971A Expired JPS5345675B2 (https=) | 1971-10-12 | 1971-10-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5345675B2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4660068A (en) * | 1982-08-24 | 1987-04-21 | Nippon Telegraph & Telephone Corporation | Substrate structure of semiconductor device and method of manufacturing the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5047580A (https=) * | 1973-08-28 | 1975-04-28 | ||
| JPS5330591B2 (https=) * | 1974-04-18 | 1978-08-28 | ||
| JPS51135376A (en) * | 1975-05-19 | 1976-11-24 | Matsushita Electric Ind Co Ltd | Junction type field effect transistor |
-
1971
- 1971-10-12 JP JP8038971A patent/JPS5345675B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4660068A (en) * | 1982-08-24 | 1987-04-21 | Nippon Telegraph & Telephone Corporation | Substrate structure of semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4846276A (https=) | 1973-07-02 |