JPS5345675B2 - - Google Patents

Info

Publication number
JPS5345675B2
JPS5345675B2 JP8038971A JP8038971A JPS5345675B2 JP S5345675 B2 JPS5345675 B2 JP S5345675B2 JP 8038971 A JP8038971 A JP 8038971A JP 8038971 A JP8038971 A JP 8038971A JP S5345675 B2 JPS5345675 B2 JP S5345675B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8038971A
Other languages
Japanese (ja)
Other versions
JPS4846276A (enFirst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8038971A priority Critical patent/JPS5345675B2/ja
Publication of JPS4846276A publication Critical patent/JPS4846276A/ja
Publication of JPS5345675B2 publication Critical patent/JPS5345675B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0142—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations the dielectric materials being chemical transformed from non-dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Element Separation (AREA)
JP8038971A 1971-10-12 1971-10-12 Expired JPS5345675B2 (enFirst)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8038971A JPS5345675B2 (enFirst) 1971-10-12 1971-10-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8038971A JPS5345675B2 (enFirst) 1971-10-12 1971-10-12

Publications (2)

Publication Number Publication Date
JPS4846276A JPS4846276A (enFirst) 1973-07-02
JPS5345675B2 true JPS5345675B2 (enFirst) 1978-12-08

Family

ID=13716919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8038971A Expired JPS5345675B2 (enFirst) 1971-10-12 1971-10-12

Country Status (1)

Country Link
JP (1) JPS5345675B2 (enFirst)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4660068A (en) * 1982-08-24 1987-04-21 Nippon Telegraph & Telephone Corporation Substrate structure of semiconductor device and method of manufacturing the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047580A (enFirst) * 1973-08-28 1975-04-28
JPS5330591B2 (enFirst) * 1974-04-18 1978-08-28
JPS51135376A (en) * 1975-05-19 1976-11-24 Matsushita Electric Ind Co Ltd Junction type field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4660068A (en) * 1982-08-24 1987-04-21 Nippon Telegraph & Telephone Corporation Substrate structure of semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS4846276A (enFirst) 1973-07-02

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