JPS5345675B2 - - Google Patents

Info

Publication number
JPS5345675B2
JPS5345675B2 JP8038971A JP8038971A JPS5345675B2 JP S5345675 B2 JPS5345675 B2 JP S5345675B2 JP 8038971 A JP8038971 A JP 8038971A JP 8038971 A JP8038971 A JP 8038971A JP S5345675 B2 JPS5345675 B2 JP S5345675B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8038971A
Other languages
Japanese (ja)
Other versions
JPS4846276A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8038971A priority Critical patent/JPS5345675B2/ja
Publication of JPS4846276A publication Critical patent/JPS4846276A/ja
Publication of JPS5345675B2 publication Critical patent/JPS5345675B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76227—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP8038971A 1971-10-12 1971-10-12 Expired JPS5345675B2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8038971A JPS5345675B2 (enrdf_load_stackoverflow) 1971-10-12 1971-10-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8038971A JPS5345675B2 (enrdf_load_stackoverflow) 1971-10-12 1971-10-12

Publications (2)

Publication Number Publication Date
JPS4846276A JPS4846276A (enrdf_load_stackoverflow) 1973-07-02
JPS5345675B2 true JPS5345675B2 (enrdf_load_stackoverflow) 1978-12-08

Family

ID=13716919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8038971A Expired JPS5345675B2 (enrdf_load_stackoverflow) 1971-10-12 1971-10-12

Country Status (1)

Country Link
JP (1) JPS5345675B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4660068A (en) * 1982-08-24 1987-04-21 Nippon Telegraph & Telephone Corporation Substrate structure of semiconductor device and method of manufacturing the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047580A (enrdf_load_stackoverflow) * 1973-08-28 1975-04-28
JPS5330591B2 (enrdf_load_stackoverflow) * 1974-04-18 1978-08-28
JPS51135376A (en) * 1975-05-19 1976-11-24 Matsushita Electric Ind Co Ltd Junction type field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4660068A (en) * 1982-08-24 1987-04-21 Nippon Telegraph & Telephone Corporation Substrate structure of semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS4846276A (enrdf_load_stackoverflow) 1973-07-02

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