JPS5345675A - Method of separating gas mixture - Google Patents
Method of separating gas mixtureInfo
- Publication number
- JPS5345675A JPS5345675A JP11853277A JP11853277A JPS5345675A JP S5345675 A JPS5345675 A JP S5345675A JP 11853277 A JP11853277 A JP 11853277A JP 11853277 A JP11853277 A JP 11853277A JP S5345675 A JPS5345675 A JP S5345675A
- Authority
- JP
- Japan
- Prior art keywords
- gas mixture
- separating gas
- separating
- mixture
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
- B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
- B01D53/047—Pressure swing adsorption
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
- B01D2253/10—Inorganic adsorbents
- B01D2253/106—Silica or silicates
- B01D2253/108—Zeolites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2256/00—Main component in the product gas stream after treatment
- B01D2256/12—Oxygen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/10—Single element gases other than halogens
- B01D2257/102—Nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/40—Further details for adsorption processes and devices
- B01D2259/40011—Methods relating to the process cycle in pressure or temperature swing adsorption
- B01D2259/40013—Pressurization
- B01D2259/40015—Pressurization with two sub-steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/40—Further details for adsorption processes and devices
- B01D2259/40011—Methods relating to the process cycle in pressure or temperature swing adsorption
- B01D2259/40035—Equalization
- B01D2259/40037—Equalization with two sub-steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/40—Further details for adsorption processes and devices
- B01D2259/40011—Methods relating to the process cycle in pressure or temperature swing adsorption
- B01D2259/40043—Purging
- B01D2259/4005—Nature of purge gas
- B01D2259/40052—Recycled product or process gas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/40—Further details for adsorption processes and devices
- B01D2259/40011—Methods relating to the process cycle in pressure or temperature swing adsorption
- B01D2259/40058—Number of sequence steps, including sub-steps, per cycle
- B01D2259/40067—Seven
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/40—Further details for adsorption processes and devices
- B01D2259/40011—Methods relating to the process cycle in pressure or temperature swing adsorption
- B01D2259/40077—Direction of flow
- B01D2259/40081—Counter-current
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/40—Further details for adsorption processes and devices
- B01D2259/402—Further details for adsorption processes and devices using two beds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
- B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
- B01D53/047—Pressure swing adsorption
- B01D53/053—Pressure swing adsorption with storage or buffer vessel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Separation Of Gases By Adsorption (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE7610947A SE409553B (sv) | 1976-10-04 | 1976-10-04 | Sett vid fraktionering av en gasblandning under utnyttjande av minst tva beddar |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5345675A true JPS5345675A (en) | 1978-04-24 |
Family
ID=20329027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11853277A Pending JPS5345675A (en) | 1976-10-04 | 1977-09-30 | Method of separating gas mixture |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS5345675A ( ) |
BE (1) | BE859324A ( ) |
DE (1) | DE2743861C2 ( ) |
DK (1) | DK148997C ( ) |
FI (1) | FI62229C ( ) |
FR (1) | FR2366050A1 ( ) |
GB (1) | GB1572532A ( ) |
IT (1) | IT1085299B ( ) |
NL (1) | NL7710848A ( ) |
NO (1) | NO145420C ( ) |
SE (1) | SE409553B ( ) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57132526A (en) * | 1980-12-29 | 1982-08-16 | Calgon Corp | Novel re-pressurizing device for pressure exchange type adsorber |
JPS57132527A (en) * | 1980-12-29 | 1982-08-16 | Calgon Corp | Novel re-pressurizing device for pressure exchange type adsorber |
JPS60150814A (ja) * | 1983-12-07 | 1985-08-08 | カルゴン カーボン コーポレーシヨン | 圧力スウイング吸着によつて供給ガス混合物流を分離するプロセス |
US4982263A (en) * | 1987-12-21 | 1991-01-01 | Texas Instruments Incorporated | Anodizable strain layer for SOI semiconductor structures |
US5001526A (en) * | 1987-11-10 | 1991-03-19 | Fujitsu Limited | Dram cell formed on an insulating layer having a buried semiconductor pillar structure and a manufacturing method thereof |
US5371037A (en) * | 1990-08-03 | 1994-12-06 | Canon Kabushiki Kaisha | Semiconductor member and process for preparing semiconductor member |
US5374329A (en) * | 1992-01-31 | 1994-12-20 | Canon Kabushiki Kaisha | Process for producing a semiconductor wafer |
US5439843A (en) * | 1992-01-31 | 1995-08-08 | Canon Kabushiki Kaisha | Method for preparing a semiconductor substrate using porous silicon |
US5466631A (en) * | 1991-10-11 | 1995-11-14 | Canon Kabushiki Kaisha | Method for producing semiconductor articles |
US6309945B1 (en) | 1992-01-31 | 2001-10-30 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate of SOI structure |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4440548A (en) * | 1982-04-19 | 1984-04-03 | Calgon Carbon Corporation | Pressure swing absorption system |
JPS5922625A (ja) * | 1982-07-27 | 1984-02-04 | Osaka Oxgen Ind Ltd | 一酸化炭素ガス及び窒素ガスを含む混合ガスより窒素ガスを吸着法により除去する方法 |
DE3433058A1 (de) * | 1984-09-08 | 1986-03-20 | Bergwerksverband Gmbh, 4300 Essen | Verfahren und vorrichtung zur erzeugung von stickstoff |
JP2683806B2 (ja) * | 1988-03-17 | 1997-12-03 | 住友精化株式会社 | 濃縮酸素回収方法 |
EP0449448B1 (en) * | 1990-03-29 | 1997-01-22 | The Boc Group, Inc. | Process for producing oxygen enriched product stream |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS543822B1 ( ) * | 1971-03-27 | 1979-02-27 | ||
US3788036A (en) * | 1972-07-26 | 1974-01-29 | D Stahl | Pressure equalization and purging system for heatless adsorption systems |
FR2270928A1 (en) * | 1974-05-15 | 1975-12-12 | Air Liquide | Gas mixt. fractioning of adsorption type - uses pressurising and expanding phases in several adsorption zones followed by equalising zone |
FR2270927A1 (en) * | 1974-05-15 | 1975-12-12 | Air Liquide | Gas mixt. fractioning of adsorption type - uses pressurising and expanding phases in several adsorption zones followed by equalising zone |
DE2460513C3 (de) * | 1974-12-20 | 1979-01-25 | Linde Ag, 6200 Wiesbaden | Verfahren und Vorrichtung zur Zerlegung von Gasgemischen durch adiabatische Ad- und Desorption |
-
1976
- 1976-10-04 SE SE7610947A patent/SE409553B/xx not_active IP Right Cessation
-
1977
- 1977-09-29 DE DE2743861A patent/DE2743861C2/de not_active Expired
- 1977-09-30 FR FR7729521A patent/FR2366050A1/fr active Granted
- 1977-09-30 JP JP11853277A patent/JPS5345675A/ja active Pending
- 1977-10-03 IT IT28198/77A patent/IT1085299B/it active
- 1977-10-03 NO NO773366A patent/NO145420C/no unknown
- 1977-10-03 GB GB40944/77A patent/GB1572532A/en not_active Expired
- 1977-10-03 BE BE181411A patent/BE859324A/xx not_active IP Right Cessation
- 1977-10-03 FI FI772916A patent/FI62229C/fi not_active IP Right Cessation
- 1977-10-04 NL NL7710848A patent/NL7710848A/xx not_active Application Discontinuation
- 1977-10-04 DK DK438977A patent/DK148997C/da not_active IP Right Cessation
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH048085B2 ( ) * | 1980-12-29 | 1992-02-14 | Calgon Carbon Corp | |
JPS57132527A (en) * | 1980-12-29 | 1982-08-16 | Calgon Corp | Novel re-pressurizing device for pressure exchange type adsorber |
JPH0239292B2 ( ) * | 1980-12-29 | 1990-09-05 | Karugon Kaabon Corp | |
JPS57132526A (en) * | 1980-12-29 | 1982-08-16 | Calgon Corp | Novel re-pressurizing device for pressure exchange type adsorber |
JPS60150814A (ja) * | 1983-12-07 | 1985-08-08 | カルゴン カーボン コーポレーシヨン | 圧力スウイング吸着によつて供給ガス混合物流を分離するプロセス |
US5001526A (en) * | 1987-11-10 | 1991-03-19 | Fujitsu Limited | Dram cell formed on an insulating layer having a buried semiconductor pillar structure and a manufacturing method thereof |
US4982263A (en) * | 1987-12-21 | 1991-01-01 | Texas Instruments Incorporated | Anodizable strain layer for SOI semiconductor structures |
US5371037A (en) * | 1990-08-03 | 1994-12-06 | Canon Kabushiki Kaisha | Semiconductor member and process for preparing semiconductor member |
US6150031A (en) * | 1990-08-03 | 2000-11-21 | Canon Kabushiki Kaisha | Semiconductor member and process for preparing semiconductor member |
US5466631A (en) * | 1991-10-11 | 1995-11-14 | Canon Kabushiki Kaisha | Method for producing semiconductor articles |
US5439843A (en) * | 1992-01-31 | 1995-08-08 | Canon Kabushiki Kaisha | Method for preparing a semiconductor substrate using porous silicon |
US5374329A (en) * | 1992-01-31 | 1994-12-20 | Canon Kabushiki Kaisha | Process for producing a semiconductor wafer |
US6309945B1 (en) | 1992-01-31 | 2001-10-30 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate of SOI structure |
US6468663B1 (en) | 1992-01-31 | 2002-10-22 | Canon Kabushiki Kaisha | Semiconductor substrate and process for producing the same |
Also Published As
Publication number | Publication date |
---|---|
DK148997B (da) | 1985-12-16 |
SE409553B (sv) | 1979-08-27 |
NO145420C (no) | 1982-04-14 |
DK148997C (da) | 1986-05-26 |
FI62229C (fi) | 1982-12-10 |
NO773366L (no) | 1978-04-05 |
FR2366050A1 (fr) | 1978-04-28 |
SE7610947L (sv) | 1978-04-05 |
NL7710848A (nl) | 1978-04-06 |
FI772916A (fi) | 1978-04-05 |
DK438977A (da) | 1978-04-05 |
DE2743861A1 (de) | 1978-04-06 |
IT1085299B (it) | 1985-05-28 |
FI62229B (fi) | 1982-08-31 |
BE859324A (fr) | 1978-02-01 |
DE2743861C2 (de) | 1984-06-28 |
NO145420B (no) | 1981-12-14 |
GB1572532A (en) | 1980-07-30 |
FR2366050B1 ( ) | 1981-08-14 |
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