JPS5343008B2 - - Google Patents
Info
- Publication number
- JPS5343008B2 JPS5343008B2 JP2328777A JP2328777A JPS5343008B2 JP S5343008 B2 JPS5343008 B2 JP S5343008B2 JP 2328777 A JP2328777 A JP 2328777A JP 2328777 A JP2328777 A JP 2328777A JP S5343008 B2 JPS5343008 B2 JP S5343008B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762608965 DE2608965A1 (de) | 1976-03-04 | 1976-03-04 | Verfahren zur bestimmung des donatorgehaltes von hochreinem polykristallinem silicium fuer halbleiterzwecke |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52106670A JPS52106670A (en) | 1977-09-07 |
| JPS5343008B2 true JPS5343008B2 (US07935154-20110503-C00006.png) | 1978-11-16 |
Family
ID=5971532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2328777A Granted JPS52106670A (en) | 1976-03-04 | 1977-03-03 | Method of measuring doner content of highhpurity polycrystal silicon for semiconductor |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4057395A (US07935154-20110503-C00006.png) |
| JP (1) | JPS52106670A (US07935154-20110503-C00006.png) |
| DE (1) | DE2608965A1 (US07935154-20110503-C00006.png) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
| FR2487808A1 (fr) * | 1980-08-01 | 1982-02-05 | Electricite De France | Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif |
| DE3048114A1 (de) * | 1980-12-19 | 1982-07-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum tiegelfreien zonenschmelzen |
| JPH05194075A (ja) * | 1992-01-24 | 1993-08-03 | Nec Corp | 単結晶育成法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3540861A (en) * | 1968-02-07 | 1970-11-17 | Union Carbide Corp | Purification of silicon compounds |
-
1976
- 1976-03-04 DE DE19762608965 patent/DE2608965A1/de active Pending
- 1976-12-01 US US05/746,375 patent/US4057395A/en not_active Expired - Lifetime
-
1977
- 1977-03-03 JP JP2328777A patent/JPS52106670A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2608965A1 (de) | 1977-09-08 |
| US4057395A (en) | 1977-11-08 |
| JPS52106670A (en) | 1977-09-07 |
