JPS5339317B2 - - Google Patents

Info

Publication number
JPS5339317B2
JPS5339317B2 JP10494975A JP10494975A JPS5339317B2 JP S5339317 B2 JPS5339317 B2 JP S5339317B2 JP 10494975 A JP10494975 A JP 10494975A JP 10494975 A JP10494975 A JP 10494975A JP S5339317 B2 JPS5339317 B2 JP S5339317B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10494975A
Other languages
Japanese (ja)
Other versions
JPS5229187A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50104949A priority Critical patent/JPS5229187A/ja
Publication of JPS5229187A publication Critical patent/JPS5229187A/ja
Publication of JPS5339317B2 publication Critical patent/JPS5339317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP50104949A 1975-09-01 1975-09-01 Method for production of polycrystalline semiconductor film Granted JPS5229187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50104949A JPS5229187A (en) 1975-09-01 1975-09-01 Method for production of polycrystalline semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50104949A JPS5229187A (en) 1975-09-01 1975-09-01 Method for production of polycrystalline semiconductor film

Publications (2)

Publication Number Publication Date
JPS5229187A JPS5229187A (en) 1977-03-04
JPS5339317B2 true JPS5339317B2 (ru) 1978-10-20

Family

ID=14394338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50104949A Granted JPS5229187A (en) 1975-09-01 1975-09-01 Method for production of polycrystalline semiconductor film

Country Status (1)

Country Link
JP (1) JPS5229187A (ru)

Also Published As

Publication number Publication date
JPS5229187A (en) 1977-03-04

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