JPS5338985A - Manufacture of charge transfer element - Google Patents

Manufacture of charge transfer element

Info

Publication number
JPS5338985A
JPS5338985A JP11294476A JP11294476A JPS5338985A JP S5338985 A JPS5338985 A JP S5338985A JP 11294476 A JP11294476 A JP 11294476A JP 11294476 A JP11294476 A JP 11294476A JP S5338985 A JPS5338985 A JP S5338985A
Authority
JP
Japan
Prior art keywords
charge transfer
manufacture
transfer element
electrodes
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11294476A
Other languages
Japanese (ja)
Inventor
Shunsuke Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11294476A priority Critical patent/JPS5338985A/en
Publication of JPS5338985A publication Critical patent/JPS5338985A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To achieve an electrode structure of 1-layer and 1-phase, which causes no fault in the electric charge transfer by forming first and second poly Si shift electrodes, which are turned to the electrodes of different phases, using SiO2 and Si3N4 films.
JP11294476A 1976-09-22 1976-09-22 Manufacture of charge transfer element Pending JPS5338985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11294476A JPS5338985A (en) 1976-09-22 1976-09-22 Manufacture of charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11294476A JPS5338985A (en) 1976-09-22 1976-09-22 Manufacture of charge transfer element

Publications (1)

Publication Number Publication Date
JPS5338985A true JPS5338985A (en) 1978-04-10

Family

ID=14599405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11294476A Pending JPS5338985A (en) 1976-09-22 1976-09-22 Manufacture of charge transfer element

Country Status (1)

Country Link
JP (1) JPS5338985A (en)

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