JPS53387B1 - - Google Patents
Info
- Publication number
- JPS53387B1 JPS53387B1 JP544572A JP544572A JPS53387B1 JP S53387 B1 JPS53387 B1 JP S53387B1 JP 544572 A JP544572 A JP 544572A JP 544572 A JP544572 A JP 544572A JP S53387 B1 JPS53387 B1 JP S53387B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/24—Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Compounds Of Iron (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10540571A | 1971-01-11 | 1971-01-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS53387B1 true JPS53387B1 (enrdf_load_stackoverflow) | 1978-01-07 |
Family
ID=22305652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP544572A Pending JPS53387B1 (enrdf_load_stackoverflow) | 1971-01-11 | 1972-01-11 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3697320A (enrdf_load_stackoverflow) |
| JP (1) | JPS53387B1 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2138410B1 (enrdf_load_stackoverflow) * | 1971-05-25 | 1973-05-25 | Commissariat Energie Atomique | |
| US3873463A (en) * | 1972-02-23 | 1975-03-25 | Philips Corp | Method of and device for manufacturing substituted single crystals |
| US4001793A (en) * | 1973-07-02 | 1977-01-04 | Rockwell International Corporation | Magnetic bubble domain composite with hard bubble suppression |
| US3922430A (en) * | 1973-10-18 | 1975-11-25 | Kuhns Roberta B | Data bearing card having an aesthetic, magnetizable, colorless, transparent coating thereon |
| JPS5820890B2 (ja) * | 1974-03-01 | 1983-04-26 | サカイカガクコウギヨウ カブシキガイシヤ | フエライト粒子の製造法 |
| US4092208A (en) * | 1974-11-27 | 1978-05-30 | U.S. Philips Corporation | Method of growing single crystals of rare earth metal iron garnet materials |
| US4013501A (en) * | 1976-05-27 | 1977-03-22 | Bell Telephone Laboratories, Incorporated | Growth of neodymium doped yttrium aluminum garnet crystals |
| US4283247A (en) * | 1979-06-21 | 1981-08-11 | Texas Instruments Incorporated | Liquid phase epitaxial process for magnetic garnet |
-
1971
- 1971-01-11 US US105405A patent/US3697320A/en not_active Expired - Lifetime
-
1972
- 1972-01-11 JP JP544572A patent/JPS53387B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3697320A (en) | 1972-10-10 |