JPS5333390B2 - - Google Patents
Info
- Publication number
- JPS5333390B2 JPS5333390B2 JP1920974A JP1920974A JPS5333390B2 JP S5333390 B2 JPS5333390 B2 JP S5333390B2 JP 1920974 A JP1920974 A JP 1920974A JP 1920974 A JP1920974 A JP 1920974A JP S5333390 B2 JPS5333390 B2 JP S5333390B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1920974A JPS5333390B2 (en:Method) | 1974-02-18 | 1974-02-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1920974A JPS5333390B2 (en:Method) | 1974-02-18 | 1974-02-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50114974A JPS50114974A (en:Method) | 1975-09-09 |
| JPS5333390B2 true JPS5333390B2 (en:Method) | 1978-09-13 |
Family
ID=11992964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1920974A Expired JPS5333390B2 (en:Method) | 1974-02-18 | 1974-02-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5333390B2 (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2344123A1 (fr) * | 1976-03-10 | 1977-10-07 | Labo Electronique Physique | Procede de croissance epitaxiale a temperature homogene et basse |
-
1974
- 1974-02-18 JP JP1920974A patent/JPS5333390B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50114974A (en:Method) | 1975-09-09 |