JPS5325386A - Switch circuit of pho to-semiconductor - Google Patents
Switch circuit of pho to-semiconductorInfo
- Publication number
- JPS5325386A JPS5325386A JP9965776A JP9965776A JPS5325386A JP S5325386 A JPS5325386 A JP S5325386A JP 9965776 A JP9965776 A JP 9965776A JP 9965776 A JP9965776 A JP 9965776A JP S5325386 A JPS5325386 A JP S5325386A
- Authority
- JP
- Japan
- Prior art keywords
- switch circuit
- pho
- semiconductor
- dielectric strength
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To obtain a switch circuit having two-way switching function bases on light control capable of heightening the dielectric strength, by holding the reverse dielectric strength of a phototransistor with the dielectric strengths of the N type base and P type emitter of an SCR.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9965776A JPS5325386A (en) | 1976-08-23 | 1976-08-23 | Switch circuit of pho to-semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9965776A JPS5325386A (en) | 1976-08-23 | 1976-08-23 | Switch circuit of pho to-semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5325386A true JPS5325386A (en) | 1978-03-09 |
Family
ID=14253112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9965776A Pending JPS5325386A (en) | 1976-08-23 | 1976-08-23 | Switch circuit of pho to-semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5325386A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4587546A (en) * | 1982-07-16 | 1986-05-06 | Siemens Aktiengesellschaft | Light-triggerable thyristor having a low light power requirement |
US4633288A (en) * | 1982-07-16 | 1986-12-30 | Siemens Aktiengesellschaft | Light-triggerable thyristor having low light power requirement and high critical voltage rise rate |
US4949147A (en) * | 1985-08-06 | 1990-08-14 | Thomson-Csf | Sensitive thyristor with integrated gate-cathode decoupling |
US5345094A (en) * | 1992-07-06 | 1994-09-06 | Kabushiki Kaisha Toshiba | Light triggered triac device and method of driving the same |
-
1976
- 1976-08-23 JP JP9965776A patent/JPS5325386A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4587546A (en) * | 1982-07-16 | 1986-05-06 | Siemens Aktiengesellschaft | Light-triggerable thyristor having a low light power requirement |
US4633288A (en) * | 1982-07-16 | 1986-12-30 | Siemens Aktiengesellschaft | Light-triggerable thyristor having low light power requirement and high critical voltage rise rate |
US4949147A (en) * | 1985-08-06 | 1990-08-14 | Thomson-Csf | Sensitive thyristor with integrated gate-cathode decoupling |
US5345094A (en) * | 1992-07-06 | 1994-09-06 | Kabushiki Kaisha Toshiba | Light triggered triac device and method of driving the same |
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