JPS5321835B2 - - Google Patents

Info

Publication number
JPS5321835B2
JPS5321835B2 JP2623073A JP2623073A JPS5321835B2 JP S5321835 B2 JPS5321835 B2 JP S5321835B2 JP 2623073 A JP2623073 A JP 2623073A JP 2623073 A JP2623073 A JP 2623073A JP S5321835 B2 JPS5321835 B2 JP S5321835B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2623073A
Other languages
Japanese (ja)
Other versions
JPS4910666A (US07534539-20090519-C00014.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4910666A publication Critical patent/JPS4910666A/ja
Publication of JPS5321835B2 publication Critical patent/JPS5321835B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2252Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/92Controlling diffusion profile by oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
JP2623073A 1972-04-06 1973-03-07 Expired JPS5321835B2 (US07534539-20090519-C00014.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00241821A US3806382A (en) 1972-04-06 1972-04-06 Vapor-solid impurity diffusion process

Publications (2)

Publication Number Publication Date
JPS4910666A JPS4910666A (US07534539-20090519-C00014.png) 1974-01-30
JPS5321835B2 true JPS5321835B2 (US07534539-20090519-C00014.png) 1978-07-05

Family

ID=22912318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2623073A Expired JPS5321835B2 (US07534539-20090519-C00014.png) 1972-04-06 1973-03-07

Country Status (7)

Country Link
US (1) US3806382A (US07534539-20090519-C00014.png)
JP (1) JPS5321835B2 (US07534539-20090519-C00014.png)
CA (1) CA980665A (US07534539-20090519-C00014.png)
DE (1) DE2316520C3 (US07534539-20090519-C00014.png)
FR (1) FR2178984B1 (US07534539-20090519-C00014.png)
GB (1) GB1397684A (US07534539-20090519-C00014.png)
IT (1) IT981193B (US07534539-20090519-C00014.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03158569A (ja) * 1989-11-15 1991-07-08 Misawa Homes Co Ltd 工業化住宅の施工用転落防止構造

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972838A (en) * 1973-11-01 1976-08-03 Denki Kagaku Kogyo Kabushiki Kaisha Composition for diffusing phosphorus
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
NL7604986A (nl) * 1976-05-11 1977-11-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting, en inrichting vervaardigd door toe- passing van de werkwijze.
DE2751163C3 (de) * 1977-11-16 1982-02-25 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur Steuerung einer offenen Gallium-Diffusion und Vorrichtung zur Durchführung desselben
DE2838928A1 (de) * 1978-09-07 1980-03-20 Ibm Deutschland Verfahren zum dotieren von siliciumkoerpern mit bor
US4234361A (en) * 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
JPS5614139U (US07534539-20090519-C00014.png) * 1979-07-14 1981-02-06
JPS6133636Y2 (US07534539-20090519-C00014.png) * 1981-01-29 1986-10-01
DE102012025429A1 (de) 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1444536C3 (de) * 1963-05-20 1975-03-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Diffusionsdotieren eines Silicium-Halbleiterkristalls

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03158569A (ja) * 1989-11-15 1991-07-08 Misawa Homes Co Ltd 工業化住宅の施工用転落防止構造

Also Published As

Publication number Publication date
GB1397684A (en) 1975-06-18
FR2178984A1 (US07534539-20090519-C00014.png) 1973-11-16
CA980665A (en) 1975-12-30
FR2178984B1 (US07534539-20090519-C00014.png) 1978-03-03
DE2316520C3 (de) 1981-12-10
US3806382A (en) 1974-04-23
DE2316520B2 (de) 1980-11-27
JPS4910666A (US07534539-20090519-C00014.png) 1974-01-30
DE2316520A1 (de) 1973-10-11
IT981193B (it) 1974-10-10

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