JPS5314915B2 - - Google Patents

Info

Publication number
JPS5314915B2
JPS5314915B2 JP12740375A JP12740375A JPS5314915B2 JP S5314915 B2 JPS5314915 B2 JP S5314915B2 JP 12740375 A JP12740375 A JP 12740375A JP 12740375 A JP12740375 A JP 12740375A JP S5314915 B2 JPS5314915 B2 JP S5314915B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12740375A
Other languages
Japanese (ja)
Other versions
JPS5252363A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50127403A priority Critical patent/JPS5252363A/ja
Priority to DE19762647949 priority patent/DE2647949A1/de
Priority to NL7611821A priority patent/NL7611821A/xx
Priority to US05/735,139 priority patent/US4128681A/en
Publication of JPS5252363A publication Critical patent/JPS5252363A/ja
Publication of JPS5314915B2 publication Critical patent/JPS5314915B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H10P14/2905—
    • H10P14/2921—
    • H10P14/3238—
    • H10P14/3422—
    • H10P14/3802—
    • H10P95/904—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/902—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
  • Recrystallisation Techniques (AREA)
JP50127403A 1975-10-24 1975-10-24 Production of insb film Granted JPS5252363A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50127403A JPS5252363A (en) 1975-10-24 1975-10-24 Production of insb film
DE19762647949 DE2647949A1 (de) 1975-10-24 1976-10-22 Verfahren zur herstellung von insb- duennfilmelementen und die dabei erhaltenen produkte
NL7611821A NL7611821A (nl) 1975-10-24 1976-10-25 Werkwijze voor de vervaardiging van een insb dunne laag.
US05/735,139 US4128681A (en) 1975-10-24 1976-10-26 Method for producing an InSb thin film element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50127403A JPS5252363A (en) 1975-10-24 1975-10-24 Production of insb film

Publications (2)

Publication Number Publication Date
JPS5252363A JPS5252363A (en) 1977-04-27
JPS5314915B2 true JPS5314915B2 (index.php) 1978-05-20

Family

ID=14959116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50127403A Granted JPS5252363A (en) 1975-10-24 1975-10-24 Production of insb film

Country Status (3)

Country Link
US (1) US4128681A (index.php)
JP (1) JPS5252363A (index.php)
NL (1) NL7611821A (index.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115639A (en) * 1978-03-01 1979-09-08 Hitachi Ltd Automatic molten metal pouring method and apparatus

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177298A (en) * 1977-03-22 1979-12-04 Hitachi, Ltd. Method for producing an InSb thin film element
US4584552A (en) * 1982-03-26 1986-04-22 Pioneer Electronic Corporation Hall element with improved composite substrate
JPH084087B2 (ja) * 1987-03-30 1996-01-17 工業技術院長 ＩｎＳｂ素子の製造方法
US4898834A (en) * 1988-06-27 1990-02-06 Amber Engineering, Inc. Open-tube, benign-environment annealing method for compound semiconductors
DE102016211191A1 (de) * 2016-06-22 2017-12-28 Michael Tummuscheit Verfahren und Vorrichtung zur Bestimmung einer Schichtdicke einer organischen Schicht auf einer Oberfläche mittels Infrarotspektroskopie

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082124A (en) * 1959-08-03 1963-03-19 Beckman Instruments Inc Method of making thin layer semiconductor devices
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge
US3674549A (en) * 1968-02-28 1972-07-04 Pioneer Electronic Corp Manufacturing process for an insb thin film semiconductor element
JPS5137915B2 (index.php) * 1973-10-19 1976-10-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115639A (en) * 1978-03-01 1979-09-08 Hitachi Ltd Automatic molten metal pouring method and apparatus

Also Published As

Publication number Publication date
JPS5252363A (en) 1977-04-27
US4128681A (en) 1978-12-05
NL7611821A (nl) 1977-04-26

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