JPS5314912B2 - - Google Patents
Info
- Publication number
- JPS5314912B2 JPS5314912B2 JP1791176A JP1791176A JPS5314912B2 JP S5314912 B2 JPS5314912 B2 JP S5314912B2 JP 1791176 A JP1791176 A JP 1791176A JP 1791176 A JP1791176 A JP 1791176A JP S5314912 B2 JPS5314912 B2 JP S5314912B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P52/00—
-
- H10P34/42—
-
- H10P54/00—
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- H10W46/00—
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- H10W46/501—
Landscapes
- Weting (AREA)
- Dicing (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1791176A JPS52101967A (en) | 1976-02-23 | 1976-02-23 | Semiconductor device |
| US05/770,605 US4073055A (en) | 1976-02-23 | 1977-02-22 | Method for manufacturing semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1791176A JPS52101967A (en) | 1976-02-23 | 1976-02-23 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52101967A JPS52101967A (en) | 1977-08-26 |
| JPS5314912B2 true JPS5314912B2 (show.php) | 1978-05-20 |
Family
ID=11956923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1791176A Granted JPS52101967A (en) | 1976-02-23 | 1976-02-23 | Semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4073055A (show.php) |
| JP (1) | JPS52101967A (show.php) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126936A (en) * | 1980-03-12 | 1981-10-05 | Toshiba Corp | Semiconductor device and production thereof |
| US4485264A (en) * | 1982-11-09 | 1984-11-27 | Energy Conversion Devices, Inc. | Isolation layer for photovoltaic device and method of producing same |
| DE3435306A1 (de) * | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
| WO1986006176A1 (en) * | 1985-04-08 | 1986-10-23 | Sgs Semiconductor Corporation | Target keys for wafer probe alignment |
| KR100287919B1 (ko) * | 1992-01-06 | 2001-05-02 | 사토 게니치로 | 더미 패턴을 갖는 반도체 칩 |
| JPH05335529A (ja) * | 1992-05-28 | 1993-12-17 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JPH0888201A (ja) * | 1994-09-16 | 1996-04-02 | Toyoda Gosei Co Ltd | サファイアを基板とする半導体素子 |
| US6022792A (en) | 1996-03-13 | 2000-02-08 | Seiko Instruments, Inc. | Semiconductor dicing and assembling method |
| US5907768A (en) * | 1996-08-16 | 1999-05-25 | Kobe Steel Usa Inc. | Methods for fabricating microelectronic structures including semiconductor islands |
| US7183137B2 (en) * | 2003-12-01 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company | Method for dicing semiconductor wafers |
| US7247570B2 (en) * | 2004-08-19 | 2007-07-24 | Micron Technology, Inc. | Silicon pillars for vertical transistors |
| JP2008218656A (ja) * | 2007-03-02 | 2008-09-18 | Denso Corp | 半導体装置の製造方法及び半導体ウエハ |
| CN104108139B (zh) * | 2013-04-18 | 2015-12-09 | 中芯国际集成电路制造(上海)有限公司 | 一种mems晶圆的切割方法 |
| WO2015019540A1 (ja) * | 2013-08-08 | 2015-02-12 | シャープ株式会社 | 半導体素子基板およびその製造方法 |
| CN109983567B (zh) * | 2019-02-13 | 2020-05-22 | 长江存储科技有限责任公司 | 用于在半导体制造中定位图案的标记 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3816906A (en) * | 1969-06-20 | 1974-06-18 | Siemens Ag | Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components |
| US3608186A (en) * | 1969-10-30 | 1971-09-28 | Jearld L Hutson | Semiconductor device manufacture with junction passivation |
| US3903591A (en) * | 1971-09-22 | 1975-09-09 | Siemens Ag | Semiconductor arrangement |
| US3965568A (en) * | 1973-08-27 | 1976-06-29 | Texas Instruments Incorporated | Process for fabrication and assembly of semiconductor devices |
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1976
- 1976-02-23 JP JP1791176A patent/JPS52101967A/ja active Granted
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1977
- 1977-02-22 US US05/770,605 patent/US4073055A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4073055A (en) | 1978-02-14 |
| JPS52101967A (en) | 1977-08-26 |