JPS53114684A - Signal charge input system for charge transfer device group - Google Patents

Signal charge input system for charge transfer device group

Info

Publication number
JPS53114684A
JPS53114684A JP2946777A JP2946777A JPS53114684A JP S53114684 A JPS53114684 A JP S53114684A JP 2946777 A JP2946777 A JP 2946777A JP 2946777 A JP2946777 A JP 2946777A JP S53114684 A JPS53114684 A JP S53114684A
Authority
JP
Japan
Prior art keywords
transfer device
device group
input system
charge transfer
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2946777A
Other languages
Japanese (ja)
Inventor
Kunihiro Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2946777A priority Critical patent/JPS53114684A/en
Publication of JPS53114684A publication Critical patent/JPS53114684A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To enable to input signal charges accurately and simultaneously for charge transfer device group of multi-channel CCD, by using the surface potential balancing method.
JP2946777A 1977-03-17 1977-03-17 Signal charge input system for charge transfer device group Pending JPS53114684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2946777A JPS53114684A (en) 1977-03-17 1977-03-17 Signal charge input system for charge transfer device group

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2946777A JPS53114684A (en) 1977-03-17 1977-03-17 Signal charge input system for charge transfer device group

Publications (1)

Publication Number Publication Date
JPS53114684A true JPS53114684A (en) 1978-10-06

Family

ID=12276897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2946777A Pending JPS53114684A (en) 1977-03-17 1977-03-17 Signal charge input system for charge transfer device group

Country Status (1)

Country Link
JP (1) JPS53114684A (en)

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